Spatially modulated femtosecond laser direct ablation-based preparation of ultra-flexible multifunctional copper mesh electrodes and its application

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Interfacial nitrogen engineering of robust silicon/MXene anode toward high energy solid-state lithium-ion batteries

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer

Liquid-phase sintering enabling mixed ionic-electronic interphases and free-standing composite cathode architecture toward high energy solid-state battery

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector