学者信息

林光杨

物理科学与技术学院

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已发表成果:

WOK 论文 43 篇;中文核心 2 篇;

  • Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

    SSRN,1556-5068,2022-10-11.
    Qian, Kun (1); Wu, Songsong (1); Qian, Jinhui (1); Yang, Kaisen (1); An, Yuying (1); Cai, Hongjie (...
    EI:20220406892  
    收录情况:EI
  • Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

    JOURNAL OF ALLOYS AND COMPOUNDS,0925-8388,2022-09-15.
    Lin, Guangyang; Qian, Kun; Cai, Hongjie; Zhao, Haochen; Xu, Jianfang; Chen, Songyan; Li, Cheng; Hic...
    WOS:000806978200001   EI:20222912361316   10.1016/j.jallcom.2022.165453
    收录情况:SCIE、EI
  • The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

    SSRN,1556-5068,2022-07-18.
    Qian, Kun (1); An, Yuying (1); Cai, Hongjie (1); Yang, Kaisen (1); Qian, Jinhui (1); Ding, Haokun (...
    EI:20220292864  
    收录情况:EI
  • Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

    JAPANESE JOURNAL OF APPLIED PHYSICS,0021-4922,2022-07-01.
    Gan, Qiuhong; Yu, Jiulong; Liao, Ye; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu, Jianfang; Li, ...
    WOS:000813914800001   EI:20222812337223   10.35848/1347-4065/ac759a
    收录情况:SCIE、EI
  • Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

    Journal of Alloys and Compounds,0925-8388,2022-05-25.
    Cai, Hongjie; Qian, Kun; An, Yuying; Lin, Guangyang; Wu, Songsong; Ding, Haokun; Huang, Wei; Chen, ...
    WOS:000779685900003   EI:20220611607031   10.1016/j.jallcom.2022.164068
    收录情况:SCIE、EI
  • Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

    APPLIED SURFACE SCIENCE,0169-4332,2022-03-30.
    Zhang, Lu; Hong, Haiyang; Qian, Kun; Wu, Songsong; Lin, Guangyang; Wang, Jianyuan; Huang, Wei; Chen...
    WOS:000736687800003   10.1016/j.apsusc.2021.152249
    收录情况:SCIE
  • Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

    Nano Research,1998-0124,2022.
    Luo, Linshan; Zheng, Feng; Gao, Haowen; Lan, Chaofei; Sun, Zhefei; Huang, Wei; Han, Xiang; Zhang, Z...
    WOS:000880257500002   EI:20224613099216   10.1007/s12274-022-5136-2
    收录情况:SCIE、EI
  • High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

    Nano Research,1998-0124,2022.
    Li, Shuo; Wu, Qiang; Ding, Haokun; Wu, Songsong; Cai, Xinwei; Wang, Rui; Xiong, Jun; Lin, Guangyang...
    WOS:000884619700001   EI:20224713135454   10.1007/s12274-022-5081-0
    收录情况:SCIE、EI