已发表成果:
WOK 论文 43 篇;中文核心 2 篇;
Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy
Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing
The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy
Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template
Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing
Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence
Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries
High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector