Articles


Document Type
Journal article (JA)
Title
Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering
Author
Ke, Shaoying(1); Lin, Shaoming(1); Ye, Yujie(1); Mao, Danfeng(1); Huang, Wei(1); Xu, Jianfang(1); Li, Cheng(1); Chen, Songyan(1)
Address
(1) Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen; 361005, China
RPAddress
Email
ResearchID
ORCID
Journal
Applied Surface Science
Publisher
Elsevier B.V.
ISSN
0169-4332
Published
2018-03-15, 434:433-439.
JCR
2
ImpactFactor
3.387
ISBN
Fund_Code
HYMC
HYDD
HYKSRQ
HYJSRQ
HYLWLB
HYJB
Keywords
Amorphous silicon - Annealing - Crystallization - Germanium - Interfaces (materials) - Magnetron sputtering - Silicon - Silicon wafers - Temperature
Abstract
We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength. ? 2017
WOS Categories
Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
Accession Number
WOS:000419116600049
UT
20174404355669
DOI
10.1016/j.apsusc.2017.10.150
ESI_Type
MATERIALS
Collection
SCIE, EI, SSCI

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