Articles


Document Type
Journal article (JA)
Title
Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature
Author
Tu, Yi(1); Ruan, Yujiao(2); Zhu, Lihong(1); Tu, Qingzhen(3); Wang, Hongwei(1); Chen, Jie(4); Lu, Yijun(1); Gao, Yulin(1); Shih, Tien-Mo(5); Chen, Zhong(1); Lin, Yue(1)
Address
(1) Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen; 361005, China; (2) Xiamen Institute of Measurement and Testing, Xiamen, Fujian, China; (3) Xiamen Dacol Photoelectronics Technology Co., Ltd., Xiamen, Fujian, China; (4) Xiamen Hualian Electronics Co., Ltd., Xiamen, Fujian, China; (5) Department of Physics, Xiamen University, Xiamen, Fujian; 361005, China
RPAddress
Xiamen Univ, Collaborat Innovat Ctr Optoelect Semicond & Effic, Fujian Engn Res Ctr Solid State Lighting, Dept Elect Sci, Xiamen 361005, Peoples R China.
Email
ResearchID
ORCID
Journal
Journal of Applied Physics
Publisher
American Institute of Physics Inc.
ISSN
0021-8979
Published
2018-04-28, 123 (16):-.
JCR
3
ImpactFactor
2.068
ISBN
Fund_Code
National natural science foundation of China [61504112, 51605404, 11604285]; International Science and Technology Cooperation Program of China [2015DFG62190]; Fundamental Research Funds for the Central Universities [20720150026]; NSF of Fujian Province [2016R0091, 2015D020]; Science and Technology project of Xiamen City [3502Z20154091]
HYMC
29th International Conference on Defects in Semiconductors (ICDS)
HYDD
Matsue, JAPAN
HYKSRQ
JUL 31-AUG 04, 2017
HYJSRQ
HYLWLB
HYJB
Keywords
Cryogenics - Defects - Gallium alloys - Indium - Light emitting diodes - Optical properties - Point defects - Testing
Abstract
We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rdof individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rdand a decrease in EQE. ? 2017 Author(s).
WOS Categories
Physics, Applied
Accession Number
WOS:000431147200074
EI收录号
20175104567966
DOI
10.1063/1.4989595
ESI_Type
PHYSICS
Collection
SCIE, EI, CPCI-S

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