英文论文
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文献类型
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Journal article (JA)
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题名
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Synthesis of Eu2+/Eu3+Co-Doped Gallium oxide nanocrystals as a full colour converter for white light emitting diodes
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作者
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Yu, Caiyan (1); Cao, Mengmeng (1); Yan, Dong (1); Lou, Sunqi (1); Xia, Chao (1); Xuan, Tongtong (2); Xie, Rong-Jun (3); Li, Huili (1)
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作者单位
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(1) Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai; 200062, China (2) Ministry of Education Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou; 510275, China (3) College of Materials, Xiamen University, Xiamen; 361005, China
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通讯作者地址
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East China Normal Univ, Sch Phys & Mat Sci, Minist Educ, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China.; Xuan, T (reprint author), Sun Yat Sen Univ, Minist Educ, Key Lab Bioinorgan & Synthet Chem,Sch Mat Sci & E, State Key Lab Optoelect Mat & Technol,Sch Chem, Guangzhou 510275, Guangdong, Peoples R China.; Xie, RJ (reprint author), Xiamen Univ, Coll Mat, Xiamen 361005, Peoples R China.
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Email
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ResearchID
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ORCID
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期刊名称
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Journal of Colloid and Interface Science
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出版社
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Academic Press Inc.
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ISSN
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0021-9797
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出版信息
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2018-11-15, 530:52-57.
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JCR
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2
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影响因子
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6.361
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ISBN
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基金
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National Natural Science Foundation of China [51472087]; Opening Project of Key Laboratory of Transparent Opto-functional Inorganic Materials, Chinese Academy of Sciences [KLTOIM201606]; Guangdong Provincial Science & Technology Project [2017A050501008]
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会议名称
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会议地点
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会议开始日期
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会议结束日期
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关键词
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Acetone; Charge transfer; Cobalt compounds; Color; Diodes; Gallium compounds; Nanocrystals
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摘要
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Eu2+and Eu3+co-doped Ga2O3nanocrystals (Ga2O3:Eu NCs) were synthesized in an organic phase at a low reaction temperature of 300 °C. The surface of Ga2O3:Eu NCs was passivated by oleylamine (OAm) and acetylacetone (acac). The coexistence of Eu2+and Eu3+as well as passivation by acac and OAm enable Ga2O3to be excited in the broad spectral range of 200–500 nm. The broadened absorption band is attributed to the strong acac → Ln(III) ligand to the metal charge transfer transition at ～370 nm, Eu(III) f-f allowed7F0→5L6transition at 395 nm, and7F0→5D2transition at 465 nm, as well as the efficient electronic transition of Eu(II) 4f → 5d at ～400 nm. Under near-ultraviolet excitation, white light emission can be achieved by combining orange-red light from f-f electronic transition of Eu(III) with blue-green-yellow light from Ga2O3oxygen defects levels. Furthermore, the resultant Ga2O3:Eu NCs with optimized quantum yield of 14.5% were coated onto 395 nm near-ultraviolet chips to fabricate a white light emitting diode. It exhibits a luminous efficiency of 34 lm/W, CIE colour coordinate of (0.2964, 0.2831) and high colour rendering index of 80. ? 2018
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一级学科
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Chemistry, Physical
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WOS入藏号
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WOS:000442700000007
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EI收录号
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20182605384957
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DOI
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10.1016/j.jcis.2018.06.047
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ESI
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CHEMISTRY
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收录于
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SCIE, EI
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