Patent


申请号
CN201510645324.5
专利链接
http://www.soopat.com/Patent/CN201510645324
专利名称
InGaN/GaN多量子阱单纳米柱LED器件及其制备方法
英文名称
InGaN/GaN multi-quantum pitfall list nanometer column LED device and its preparation method
申请日
2015-10-08
主分类号
H01L33/06
分类号
H01L33/06; H01L33/32; H01L33/36; H01L33/00
申请人
南京大学
公告号
CN105206727B
当前法律状态
授权
专利有效性
有效
法律状态
法律状态公告日:20151230;法律状态:公开;描述信息:公开;法律状态公告日:20160127;法律状态:实质审查的生效;描述信息:实质审查的生效IPC(主分类):H01L 33/06;  申请日:20151008;法律状态公告日:20170804;法律状态:授权;描述信息:授权;
专利类型
发明授权
公告日
2017-08-04
专利代理机构
北京市京大律师事务所 11321
代理人
王凝; 金凤
地址
210093 江苏省南京市鼓楼区汉口路22号
优先权
国省代码
中国
摘要
本发明公开了一种InGaN/GaN多量子阱单纳米柱LED器件,InGaN/GaN多量子阱纳米柱两端的n型GaN层和p型GaN层离金属电极膜的距离在100nm以内或直接接触金属电极膜,且中间的InxGa1‑xN/GaN量子阱有源层与金属电极膜隔离,在InGaN/GaN多量子阱纳米柱两端与金属电极膜接触的部位通过聚焦离子束系统二次沉积金属电极形成欧姆接触。本发明方法的主要特点是使用紫外光光刻和聚焦离子束二次沉积形成纳米柱的欧姆接触,使用该方法能够显著提高电极与纳米柱的对准精度和制备成功率,以及在制备电极的同时,不损伤InGaN/GaN多量子阱,从而实现较好的金属半导体接触,提高电注入的电流密度从而增加发光亮度。该方法适用于制备单纳米柱InGaN/GaN发光二极管,尤其适用于尺度小于紫外光光刻极限的纳米器件。
主权项
一种InGaN/GaN多量子阱单纳米柱LED器件,包括器件基片;沉积在器件基片上的器件绝缘层;沉积在器件绝缘层上的金属电极膜层;其特征在于:所述金属电极膜层表面光刻出一条或多条纵横的沟槽将金属电极膜分割成多个互相隔离的区域,还包括至少一根InGaN/GaN多量子阱纳米柱,所述InGaN/GaN多量子阱纳米柱至少包括在蓝宝石衬底上依次生长的n型GaN层,In<sub>x</sub>Ga<sub>1-x</sub>N/GaN量子阱有源层和p型GaN层,所述沟槽的宽度小于整根InGaN/GaN多量子阱纳米柱的长度,所述InGaN/GaN多量子阱纳米柱横跨于沟槽,两端的n型GaN层和p型GaN层距离两个不同隔离区域的金属电极膜的距离在100nm以内或直接接触两个不同隔离区域的金属电极膜,且中间的In<sub>x</sub>Ga<sub>1-x</sub>N/GaN量子阱有源层与金属电极膜隔离,在InGaN/GaN多量子阱纳米柱两端与金属电极膜接触的部位通过聚焦离子束系统二次沉积金属电极形成欧姆接触。
发明人
刘斌; 智婷; 张荣; 陶涛; 谢自力; 郭旭; 葛海雄; 陈鹏; 陈敦军; 韩平; 施毅; 郑有炓
inpadoc同族
厦大机构
更新时间
20171214
摘要_en
The invention discloses an InGaN/GaN multi-quantum-well single-nano-pole LED device. The distance between an n-type GaN layer and a p-type GaN layer at the two ends of an InGaN/GaN multi-quantum-well nano-pole and the corresponding portions of a metal electrode film is smaller than or equal to 100 nm or the n-type GaN layer and the p-type GaN layer at the two ends of the InGaN/GaN multi-quantum-well nano-pole are in direct contact with the metal electrode film, a middle InxGa1-x/GaN quantum well active layer is isolated from the metal electrode film, and metal electrodes are secondarily deposited at the portions where the two ends of the InGaN/GaN multi-quantum-well nano-pole are in contact with the metal electrode film through a focused ion beam system to form ohmic contact. A method of the InGaN/GaN multi-quantum-well single-nano-pole LED device is mainly characterized in that ohmic contact of the nano-pole is formed through ultraviolet photoetching and focusing ion beam secondary depositing. By means of the method, the alignment accuracy between the electrodes and the nano-pole can be remarkably improved, the preparing success rate can be remarkably increased, multiple InGaN/GaN quantum wells are not damaged while the electrodes are prepared, good metal semiconductor contact is achieved accordingly, the electric injection current density is improved, and therefore luminance is improved. The method is suitable for preparing a single-nano-pole InGaN/GaN light emitting diode, and is particularly suitable for nanometer devices with the sizes smaller than the limitation of ultraviolet photoetching.

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