Patent


申请号
CN201510816440.9
专利链接
http://www.soopat.com/Patent/CN201510816440
专利名称
异质结倍增层增强型AlGaN日盲雪崩光电二极管及其制备方法
英文名称
Heterojunction times multilayer enhanced AlGaN blind avalanche photodiode and its preparation method
申请日
2015-11-23
主分类号
H01L31/107
分类号
H01L31/107; H01L31/0304; H01L31/18
申请人
南京大学
公告号
CN105261668B
当前法律状态
授权
专利有效性
有效
法律状态
法律状态公告日:20160120;法律状态:公开;描述信息:公开;法律状态公告日:20160217;法律状态:实质审查的生效;描述信息:实质审查的生效IPC(主分类):H01L 31/107;  申请日:20151123;法律状态公告日:20170329;法律状态:授权;描述信息:授权;
专利类型
发明授权
公告日
2017-03-29
专利代理机构
北京科亿知识产权代理事务所(普通合伙) 11350
代理人
王清义
地址
210093 江苏省南京市鼓楼区汉口路22号
优先权
国省代码
中国
摘要
本发明公开了一种异质结倍增层增强型AlGaN日盲雪崩光电二极管,其结构从下至上依次为:AlN模板层、AlxGa1?xN缓冲层、n型AlxGa1?xN层、i型AlyGa1?yN吸收层、n型AlyGa1?yN分离层、i型AlyGa1?yN倍增层、i型AlzGa1?zN倍增层、p型AlzGa1?zN层、p型GaN层,在n型AlxGa1?xN层上引出n型欧姆电极,在p型GaN层上引出p型欧姆电极,所述x、y、z满足0.2≤z<y<x,且y≥z+0.2。还公开了其制备方法。本发明设计的SAM结构异质结倍增层增强型AlGaN日盲雪崩光电二极管,可明显提高空穴的离化率、降低电子的碰撞离化、降低APD雪崩击穿时的器件噪声,有助于提高APD器件的整体性能。
主权项
一种异质结倍增层增强型AlGaN日盲雪崩光电二极管,其结构从下至上依次为:AlN模板层、Al<sub>x</sub>Ga<sub>1-x</sub>N缓冲层、n型Al<sub>x</sub>Ga<sub>1-x</sub>N层、i型Al<sub>y</sub>Ga<sub>1-y</sub>N吸收层、n型Al<sub>y</sub>Ga<sub>1-y</sub>N分离层、i型Al<sub>y</sub>Ga<sub>1-y</sub>N倍增层、i型Al<sub>z</sub>Ga<sub>1-z</sub>N倍增层、p型Al<sub>z</sub>Ga<sub>1-z</sub>N层、p型GaN层,在n型Al<sub>x</sub>Ga<sub>1-x</sub>N层上引出n型欧姆电极,在p型GaN层上引出p型欧姆电极,其特征在于:所述x、y、z满足0.2≤z<y<x,且y≥z+0.2;所述Al<sub>x</sub>Ga<sub>1-x</sub>N缓冲层厚度为300~600nm,所述n型Al<sub>x</sub>Ga<sub>1-x</sub>N层厚度为300~600nm,所述i型Al<sub>y</sub>Ga<sub>1-y</sub>N吸收层厚度为150~220nm,所述n型Al<sub>y</sub>Ga<sub>1-y</sub>N分离层厚度为60~80nm,所述i型Al<sub>y</sub>Ga<sub>1-y</sub>N倍增层厚度为100~150nm,所述i型Al<sub>z</sub>Ga<sub>1-z</sub>N倍增层厚度为50~100nm,所述p型Al<sub>z</sub>Ga<sub>1-z</sub>N层厚度为80~120nm,所述p型GaN层厚度为30~80nm。
发明人
陈敦军; 张荣; 郑有炓
inpadoc同族
厦大机构
更新时间
20171214
摘要_en
The invention discloses a heterojunction multiplication layer reinforced type AlGaN solar-blind avalanche photodiode. The photodiode comprises an AlN template layer, an AlxGa1-xN buffering layer, an n type AlxGa1-xN layer, an i type AlyGa1-yN absorbing layer, an n type AlyGa1-yN separating layer, an i type AlyGa1-yN multiplication layer, an i type AlzGa1-zN multiplication layer, a p type AlzGa1-zN layer and a p type GaN layer bottom up in sequence; an n type ohmic electrode is led out of the n type AlxGa1-xN layer; a p type ohmic electrode is led out of the p type GaN layer; and the x, y and z satisfy the inequation that x is greater than y, y is greater than z, and the z is greater than or equal to 0.2, and y is greater than or equal to z plus 0.2. The invention also discloses a preparation method for the photodiode. The SAM structured heterojunction multiplication layer reinforced type AlGaN solar-blind avalanche photodiode can dramatically improve the electron hole ionization efficiency, reduce the collision and ionization of electrons, reduce the device noises in APD (avalanche photodiode) avalanche breakdown, and can improve the overall performance of the APD devices.

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