厦门大学学者库

学者信息

汪建元 (JianYuan Wang)

物理科学与技术学院

归档
2024
2023
2022
2021
2020
合作者

已发表成果：

WOK 论文 70 篇;中文核心 10 篇;其它论文 3 篇;

  • Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

    SSRN,1556-5068,2023-12-05.
    Zhu, Yiming (1); Yang, Tianwei (1); Ding, Haokun (1); Lin, Guangyang (1); Li, Cheng (1); Huang, Wei...
    EI:20230444317   10.2139/ssrn.4653522
    收录情况：EI

  • Ultrahigh Sensitive Phototransistor Based on MoSe<sub>2</sub>/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

    IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2023-11-03.
    Li, Haiying; Cai, Xinwei; Wang, Jianyuan; Lin, Guangyang; Li, Cheng
    WOS:001107516700001   EI:20234915163710   10.1109/TED.2023.3328300
    收录情况：SCIE、EI

  • Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

    Journal of Physics D: Applied Physics,0022-3727,2023-08-31.
    Lin, Guangyang; Qian, Jinhui; Ding, Haokun; Wu, Songsong; Li, Cheng; Wang, Jianyuan; Xu, Jianfang; ...
    WOS:000997114000001   EI:20232314181501   10.1088/1361-6463/acd4cb
    收录情况：SCIE、EI

  • Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

    Applied Surface Science,0169-4332,2023-06-30.
    Lin, Guangyang; Qian, Kun; Ding, Haokun; Qian, Jinhui; Xu, Jianfang; Wang, Jianyuan; Ke, Shaoying; ...
    WOS:000971474100001   EI:20231313804427   10.1016/j.apsusc.2023.157086
    收录情况：SCIE、EI

  • Complementary bipolar resistive switching behavior in lithium titanate memory device

    APPLIED PHYSICS EXPRESS,1882-0778,2023-05-01.
    Liao, Ye; Chen, Gongying; Luo, Linshan; Yu, Jiulong; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu...
    WOS:000992577300001   EI:20232214167642   10.35848/1882-0786/acd35e
    收录情况：SCIE、EI

  • Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2023-02-16.
    Qian, Kun; Wu, Songsong; Qian, Jinhui; Yang, Kaisen; An, Yuying; Cai, Hongjie; Lin, Guangyang; Wang...
    WOS:000917776000001   EI:20230513499395   10.1088/1361-6463/acaf39
    收录情况：SCIE、EI

  • Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

    SSRN,1556-5068,2023-01-31.
    Lin, Guangyang (1); Qian, Kun (1); Ding, Haokun (1); Qian, Jinhui (1); Xu, Jianfang (1); Wang, Jian...
    EI:20230035074   10.2139/ssrn.4343359
    收录情况：EI

  • The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

    Journal of Crystal Growth,0022-0248,2023-01-01.
    Qian, Kun; An, Yuying; Cai, Hongjie; Yang, Kaisen; Qian, Jinhui; Ding, Haokun; Lin, Guangyang; Wang...
    WOS:000882390200002   EI:20224413044446   10.1016/j.jcrysgro.2022.126954
    收录情况：SCIE、EI

  • Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

    NANOPHOTONICS,2192-8606,2023-01.
    Lin, Guangyang; An, Yuying; Ding, Haokun; Zhao, Haochen; Wang, Jianyuan; Chen, Songyan; Li, Cheng; ...
    WOS:000912853200001   EI:20230413422452   10.1515/nanoph-2022-0489
    收录情况：SCIE、EI

  • 锗锡薄膜的分子束外延生长及退火研究

    厦门大学学报(自然科学版),0438-0479,2023-03-28.
    林光杨;钱坤;蔡宏杰;汪建元;徐剑芳;陈松岩;李成
    CSCD扩展库