学者信息

Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Photonics Research,2327-9125,2022-12-01.
Chen, Li; Sun, Jie; Guo, Wei; Hoo, Jason; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Yan, Long; Guo, S...
WOS:000914456800013 EI:20225113283930 10.1364/PRJ.459897
收录情况：SCIE、EI

Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping

PHYSICAL CHEMISTRY CHEMICAL PHYSICS,1463-9076,2022-02.
Lu, Shiqiang; Zheng, Tongchang; Jiang, Ke; Sun, Xiaojuan; Li, Dabing; Chen, Hangyang; Li, Jinchai; ...
WOS:000755956900001 EI:20221111795086 10.1039/d1cp04303j
收录情况：SCIE、EI

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

NANOSCALE RESEARCH LETTERS,1931-7573,2022-01-15.
Lu, Shiqiang; Luo, Zongyan; Li, Jinchai; Lin, Wei; Chen, Hangyang; Liu, Dayi; Cai, Duanjun; Huang, ...
WOS:000743336500001 EI:20220411488980 10.1186/s11671-022-03652-0
收录情况：SCIE、EI

Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm

Optical Materials Express,2159-3930,2021-04.
Gao, Na; Chen, Junxin; Feng, Xiang; Lu, Shiqiang; Lin, Wei; Li, Jinchai; Chen, Hangyang; Huang, Kai...
WOS:000637184100007 EI:20211710246932 10.1364/OME.422215
收录情况：SCIE、EI

Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Crystal Growth and Design,1528-7483,2021.
Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Ji...
WOS:000648580100036 EI:20211910312847 10.1021/acs.cgd.1c00086
收录情况：SCIE、EI

Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer

AIP Advances,2158-3226,2019-05-01.
Luo, Zongyan (1); Lu, Shiqiang (1); Li, Jinchai (1); Wang, Chuanjia (1); Chen, Hangyang (1); Liu, D...
WOS:000477701000005 EI:20192006915952 10.1063/1.5091027
收录情况：SCIE、EI

Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units

Crystal Growth and Design,1528-7483,2019-03-06.
Gao, Na (1); Feng, Xiang (1); Lu, Shiqiang (1); Lin, Wei (1); Zhuang, Qinqin (2); Chen, Hangyang (1...
EI:20191106614803 10.1021/acs.cgd.8b01677
收录情况：EI

Spatially-Controllable Hot Spots for Plasmon-Enhanced Second-Harmonic Generation in AgNP-ZnO Nanocavity Arrays

NANOMATERIALS,2079-4991,2018-12.
Shen, SX; Gao, M; Ban, RC; Chen, HY; Wang, XJ; Qian, LH; Li, J; Yang, ZL
WOS:000455323100050 10.3390/nano8121012
收录情况：SCIE

Improved characteristics of AlGaN-based deep ultraviolet light-emitting diodes with superlattice p-type doping

IEEE Photonics Journal,1943-0655,2017-06.
Si, Qianying(1); Chen, Hangyang(1); Li, Shuping(1); Lu, Shiqiang(1); Kang, Junyong(1)
EI:20173604125187 10.1109/JPHOT.2017.2699322
收录情况：EI

Emission mechanism of high Al-content AlGaN multiple quantum wells

Faguang Xuebao/Chinese Journal of Luminescence,1000-7032,2016-05-01.
Li, Jin-Chai(1); Ji, Gui-Lin(1); Yang, Wei-Huang(1); Jin, Peng(2); Chen, Hang-Yang(1); Lin, Wei(1);...
EI:20162102417764 10.3788/fgxb20163705.0513
收录情况：EI

Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg-Si codoping pair by MOCVD

JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2016-03-23.
Soomro, Abdul Majid; Wu, Chenping; Lin, Na; Zheng, Tongchang; Wang, Huachun; Chen, Hangyang; Li, Ji...
WOS:000371007100013 EI:20161102089282 10.1088/0022-3727/49/11/115110
收录情况：SCIE、EI

Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair

Applied Physics Letters,0003-6951,2015-03-16.
Chen, Xiaohong(1); Xu, Hongmei(1); Lin, Na(1,2); Xu, Fuchun(1); Chen, Hangyang(1); Cai, Duanjun(1,3...
WOS:000351595500015 EI:20151300679641 10.1063/1.4914183
收录情况：SCIE、EI

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection

Nanoscale,2040-3364,2014-12-21.
Gao, Na(1); Lin, Wei(1); Chen, Xue(1); Huang, Kai(1,2); Li, Shuping(1); Li, Jinchai(1); Chen, Hangy...
WOS:000345458200022 EI:20144800257998 10.1039/c4nr04286g
收录情况：SCIE、EI

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

SCIENTIFIC REPORTS,2045-2322,2014-06-05.
Yang, Weihuang; Li, Jinchai; Zhang, Yong; Huang, Po-Kai; Lu, Tien-Chang; Kuo, Hao-Chung; Li, Shupin...
WOS:000336788400001 10.1038/srep05166
收录情况：SCIE

High Mg effective incorporation in Al-rich AlxGa1-xN by periodic repetition of ultimate V/III ratio conditions

Nanoscale Research Letters,1931-7573,2014.
Zheng, Tongchang(1); Lin, Wei(1); Cai, Duanjun(1); Yang, Weihuang(1); Jiang, Wei(1); Chen, Hangyang...
WOS:000330984300001 EI:20141117465439 10.1186/1556-276X-9-40
收录情况：SCIE、EI

Defect suppression in AlN epilayer using hierarchical growth units

Journal of Physical Chemistry C,1932-7447,2013-07-11.
Zhuang, Qinqin(1,2); Lin, Wei(1); Yang, Weihuang(1); Yang, Wencao(1); Huang, Chengcheng(3); Li, Jin...
WOS:000321883600045 EI:20132916519266 10.1021/jp401745v
收录情况：SCIE、EI

Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme

Journal of Materials Research,0884-2914,2013-03-14.
Chen, Xiaohong(1); Lin, Na(1); Cai, Duanjun(1); Zhang, Yong(2); Chen, Hangyang(1); Kang, Junyong(1)
WOS:000316218000007 EI:20131316140061 10.1557/jmr.2012.432
收录情况：SCIE、EI

Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion

JAPANESE JOURNAL OF APPLIED PHYSICS,0021-4922,2013.
Cai, Duanjun; Chen, Xiaohong; Xu, Hongmei; Lin, Na; Xu, Fuchun; Chen, Hangyang
WOS:000323883100039 EI:20133616697241 10.7567/JJAP.52.08JB30
收录情况：SCIE、EI

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

AIP Advances,2158-3226,2013.
Yang, Weihuang(1); Li, Jinchai(1); Lin, Wei(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Ya...
WOS:000320673600003 EI:20132516425851 10.1063/1.4804247
收录情况：SCIE、EI

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

Journal of Semiconductors,1674-4926,2011-04.
Wang, Yuanzhang(1,2); Li, Jinchai(2); Li, Shuping(2); Chen, Hangyang(2); Liu, Dayi(2); Kang, Junyon...
EI:20111913959812 10.1088/1674-4926/32/4/043006
收录情况：EI

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

Journal of Materials Research,0884-2914,2011-03.
Wang, Xiuhua; Chen, Shanshan; Lin, Wei; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong
WOS:000292826200007 EI:20114414460009 10.1557/jmr.2010.87
收录情况：SCIE、EI

Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures

Journal of Materials Research,0884-2914,2010-06.
Yang, Weihuang(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Kang, Junyong(1)
WOS:000278161900007 EI:20104313324557 10.1557/jmr.2010.0135
收录情况：SCIE、EI

Enhancement of p -type conductivity by modifying the internal electric field in Mg- and Si-δ -codoped Alx Ga1-x N/ Aly Ga1-y N superlattices

Applied Physics Letters,0003-6951,2009-10-12.
Li, Jinchai(1); Yang, Weihuang(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Kang, Junyong(1)
WOS:000270915700013 EI:20094312400149 10.1063/1.3248026
收录情况：SCIE、EI

Design and epitaxy of structural III-nitrides

Journal of Crystal Growth,0022-0248,2009-01-15.
Li, J. C.; Lin, W.; Yang, W. H.; Cai, W. Z.; Pan, Q. F.; Lin, X. J.; Li, S. P.; Chen, H. Y.; Liu, D...
WOS:000264161700013 10.1016/j.jcrysgro.2008.09.016
收录情况：SCIE、CPCI-S

AlGaN-based deep-ultraviolet light emitting diodes fabricated on aln/sapphire template

Chinese Physics Letters,0256-307X,2009.
Sang, Li-Wen (1); Qin, Zhi-Xin (1); Fang, Hao (1); Zhang, Yan-Zhao (1); Li, Tao (1); Xu, Zheng-Yu (...
EI:20220711665817 10.1088/0256-307X/26/11/117801
收录情况：EI

AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template

Chinese Physics Letters,0256-307X,2008-01-01.
Sang, Li-Wen (1); Qin, Zhi-Xin (1); Cen, Long-Bin (1); Shen, Bo (1); Zhang, Guo-Yi (1); Li, Shu-Pin...
EI:20220711663744 10.1088/0256-307X/25/1/070
收录情况：EI

Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures

Proceedings of SPIE - The International Society for Optical Engineering,0277-786X,2008.
Chen, P.(1); Li, S.P.(2); Tu, X.G.(1); Zuo, Y.H.(1); Zhao, L.(1); Chen, S.W.(1); Li, J.C.(2); Lin, ...
EI:20081711211458 10.1117/12.792582
收录情况：EI

Enhanced Pockels effect in GaN Alx Ga1-x N superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer

Applied Physics Letters,0003-6951,2007-07-16.
Chen, P.(1); Tu, X.G.(1); Li, S.P.(2); Li, J.C.(2); Lin, W.(2); Chen, H.Y.(2); Liu, D.Y.(2); Kang, ...
WOS:000248194000003 EI:20073110718313 10.1063/1.2759267
收录情况：SCIE、EI

Defect influence on luminescence efficiency of GaN-based LEDs

Materials Science in Semiconductor Processing,1369-8001,2006 February-June.
Li, Shuping(1); Fang, Zhilai(1); Chen, Hangyang(1); Li, Jinchai(1); Chen, Xiaohong(1); Yuan, Xiaoli...
WOS:000238805900078 EI:2006239924609 10.1016/j.mssp.2006.01.019
收录情况：SCIE、EI、CPCI-S

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