Lithium titanate synaptic device imitating lithium-ion battery structure

Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Resistive switching properties in polycrystalline LiNbO₃ thin films

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Dissecting the Extended X-Ray Emission in the Merging Pair NGC 6240: Photoionization and Winds

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

The nuclear architecture of NGC 4151: On the path toward a universal outflow mechanism in light of NGC 1068

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Research progress of technologies for germanium near-infrared photodetectors

High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)(3) and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)(3) modification

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

Double-shelled microscale porous Si anodes for stable lithium-ion batteries

Any-polar resistive switching behavior in LATP films

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 mu m

Schottky barrier height modulation effect on n-Ge with TaN contact

Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition

Scalable Engineering of Bulk Porous Si Anodes for High Initial Efficiency and High-Areal-Capacity Lithium-Ion Batteries

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection

Low resistivity Ta textured film formed on TaN

Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2blocking layer

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Simulation of spontaneous emission spectrum of degenerate Ge under large injection level

Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

Innovative Ge–SiO2bonding based on an intermediate ultra-thin silicon layer

Impacts of excimer laser annealing on Ge epilayer on Si

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Impact of nitrogen plasma passivation on the Al/n-Ge contact

High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Selective area growth of Ge film on Si

Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes

Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

Investigation of passivation of porous silicon at room temperature