Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Dissecting the Extended X-Ray Emission in the Merging Pair NGC 6240: Photoionization and Winds

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

The nuclear architecture of NGC 4151: On the path toward a universal outflow mechanism in light of NGC 1068

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Research progress of technologies for germanium near-infrared photodetectors

High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)(3) and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)(3) modification

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Double-shelled microscale porous Si anodes for stable lithium-ion batteries

Any-polar resistive switching behavior in LATP films

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 mu m

Schottky barrier height modulation effect on n-Ge with TaN contact

Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition

Scalable Engineering of Bulk Porous Si Anodes for High Initial Efficiency and High-Areal-Capacity Lithium-Ion Batteries

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection

Low resistivity Ta textured film formed on TaN

Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2blocking layer

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Simulation of spontaneous emission spectrum of degenerate Ge under large injection level

Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

Innovative Ge–SiO2bonding based on an intermediate ultra-thin silicon layer

Impacts of excimer laser annealing on Ge epilayer on Si

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Impact of nitrogen plasma passivation on the Al/n-Ge contact

High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Selective area growth of Ge film on Si

Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes

Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

Investigation of passivation of porous silicon at room temperature