厦门大学学者库

学者信息

YANG WEIFENG

电子科学与技术学院（国家示范性微电子学院）

归档
2024
2023
2022
2021
合作者

已发表成果：

WOK 论文 15 篇;

  • Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO<sub>2</sub>/SiO<sub>2</sub> interface engineering

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2024-09-20.
    Wang, Xinwei; Wei, Shubo; Ke, Huihuang; Ye, Xiaofeng; Weng, Hongjin; Wong, Shen Yuong; Yang, Weifeng
    WOS:001262737800001   EI:20242716606942   10.1088/1361-6463/ad5213
    收录情况：SCIE、EI

  • A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

    Microelectronics Reliability,0026-2714,2024-09.
    Ye, Xiaofeng; Ke, Huihuang; Wei, Shubo; Weng, Hongjin; Wang, Xinwei; Wong, Shen Yuong; Yang, Weifeng
    WOS:001275033500001   EI:20242916721022   10.1016/j.microrel.2024.115459
    收录情况：SCIE、EI

  • Gallium-incorporated TiO<sub>2</sub> thin films by atomic layer deposition for future electronic devices

    FRONTIERS IN MATERIALS,2296-8016,2024-06-13.
    Sun, Qingxuan; Lin, Yingzhen; Han, Chaoya; Yang, Ze; Li, Ying; Zeng, Yuping; Yang, Weifeng; Zhang, ...
    WOS:001255146000001   EI:20242616530548   10.3389/fmats.2024.1430884
    收录情况：SCIE、EI

  • Improved β-Ga 2 O 3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer

    Micro and Nanostructures,,2024-06.
    Chen, Shutao; Du, Song; Wang, Kaikai; Qiao, Liang; Zhang, Chuanlun; Yang, Weifeng; Li, Qiang; Zheng...
    WOS:001219189800001   EI:20241515868459   10.1016/j.micrna.2024.207831
    收录情况：SCIE、EI

  • High-Performance β-Ga<sub>2</sub>O<sub>3</sub> MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer

    IEEE PHOTONICS TECHNOLOGY LETTERS,1041-1135,2024-05-01.
    Zhang, Chuanlun; Tian, Chengyi; Wei, Shubo; Cai, Ziling; Long, Hao; Zhang, Jie; Hong, Rongdun; Yang...
    WOS:001197777900001   EI:20241415851375   10.1109/LPT.2024.3381997
    收录情况：SCIE、EI

  • High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> p-n Heterojunction

    IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2024-03-18.
    Lin, Jialong; Hong, Zifan; Long, Mingtao; Wei, Shubo; Peng, Xingkun; He, Xiyao; Long, Hao; Zhang, J...
    WOS:001189437700001   EI:20241315802226   10.1109/TED.2024.3373382
    收录情况：SCIE、EI

  • High-Performance 8 x 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

    IEEE Photonics Technology Letters,1041-1135,2024-02-15.
    Ke, Huihuang; Ye, Xiaofeng; Wang, Xinwei; Sun, Youcheng; Hong, Rongdun; Yang, Weifeng
    WOS:001165572900007   EI:20240315387113   10.1109/LPT.2024.3349922
    收录情况：SCIE、EI

  • Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing

    Advanced Science,,2024.
    Wang, Jinyong; Ren, Yujing; Yang, Ze; Lv, Qiaoya; Zhang, Yu; Zhang, Mingyue; Zhao, Tiancheng; Gu, D...
    WOS:001185821300001   EI:20241215758335   10.1002/advs.202309538
    收录情况：SCIE、EI

  • Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga<sub>2</sub>O<sub>3</sub> Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

    IEEE Sensors Journal,1530-437X,2024.
    Tian, Chengyi; Zhang, Chuanlun; Lin, Jialong; Zhang, Jie; Yang, Weifeng
    WOS:001219652600044   EI:20241315814254   10.1109/JSEN.2024.3373252
    收录情况：SCIE、EI

  • Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors

    ACS Applied Materials and Interfaces,1944-8244,2024.
    Yang, Ze; Peng, Xingkun; Wang, Jinyong; Lin, Jialong; Zhang, Chuanlun; Tang, Baoshan; Zhang, Jie; Y...
    WOS:001227796000001   EI:20241916045951   10.1021/acsami.4c02106
    收录情况：SCIE、EI

  • Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

    FRONTIERS OF PHYSICS,2095-0462,2023-02.
    Zhu, Huili; Hong, Zifan; Zhou, Changjie; Wu, Qihui; Zheng, Tongchang; Yang, Lan; Lan, Shuqiong; Yan...
    WOS:000878121500001   10.1007/s11467-022-1207-9
    收录情况：SCIE

  • Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off

    Technical Digest - International Electron Devices Meeting, IEDM,0163-1918,2023.
    Zhang, J. (1, 2); Zhang, Z. (1); Dou, H. (3); Lin, Z. (1); Xu, K. (3); Yang, W. (2); Zhang, X. (3);...
    EI:20240815611406   10.1109/IEDM45741.2023.10413810
    收录情况：EI

  • Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations

    FRONTIERS OF PHYSICS,2095-0462,2022-10.
    Zhou, Changjie; Zhu, Huili; Yang, Weifeng; Lin, Qiubao; Zheng, Tongchang; Yang, Lan; Lan, Shuqiong
    WOS:000819415500002   10.1007/s11467-022-1167-0
    收录情况：SCIE

  • Interfacial properties of 2DWS2on SiO2substrate from x-ray photoelectron spectroscopy and first-principles calculations

    arXiv,,2022-05-18.
    Zhou, Changjie (1); Zhu, Huili (1); Yang, Weifeng (2); Lin, Qiubao (1); Zheng, Tongchang (1); Yang,...
    EI:20220118443   10.48550/arXiv.2205.08994
    收录情况：EI

  • Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

    Science China Materials,2095-8226,2021.
    Tang, Baoshan; Zhao, Yunshan; Zhou, Changjie; Zhang, Mingkun; Zhu, Huili; Li, Yida; Leong, Jin Feng...
    WOS:000709259300002   EI:20214311049426   10.1007/s40843-021-1782-y
    收录情况：SCIE、EI