已发表成果:
WOK 论文 2 篇;专利发明 1 个;
Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped beta-Ga2O3 with high hole mobility (Mar, 10.1039/d1tc05324h., 2022)
Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer