学者信息
已发表成果：
WOK 论文 37 篇;中文核心 2 篇;其它论文 2 篇;
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High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET
IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2020-10.
Shen, Zhanwei; Zhang, Feng; Yan, Guoguo; Wen, Zhengxin; Zhao, Wanshun; Wang, Lei; Liu, Xingfang; Su...
WOS:000572635400019 10.1109/TED.2020.3005899
收录情况：SCIE -
Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H-SiC
Applied Physics Letters,0003-6951,2020-09-08.
Shen, Zhanwei; Zhang, Feng; Chen, Jun; Fu, Zhao; Liu, Xingfang; Yan, Guoguo; Lv, Bowen; Wang, Yinsh...
WOS:000571939200002 EI:20203909246622 10.1063/5.0018330
收录情况：SCIE、EI -
Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias
Applied Physics Letters,0003-6951,2020-08-17.
Sun, Cunzhi; Chen, Xiufang; Hong, Rongdun; Li, Xiaomeng; Xu, Xiangang; Chen, Xiaping; Cai, Jiafa; Z...
WOS:000563577600001 EI:20204509457651 10.1063/5.0012566
收录情况：SCIE、EI -
Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling
Journal of Crystal Growth,0022-0248,2020-02-01.
He, Yawei; Yan, Guoguo; Shen, Zhanwei; Zhao, Wanshun; Wang, Lei; Liu, Xingfang; Sun, Guosheng; Zhan...
WOS:000504205900030 EI:20194707718598 10.1016/j.jcrysgro.2019.125352
收录情况：SCIE、EI、CPCI-S -
Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4 degrees off-axis substrates
Journal of Crystal Growth,0022-0248,2020-02-01.
Yan, G. G.; He, Y. W.; Shen, Z. W.; Cui, Y. X.; Li, J. T.; Zhao, W. S.; Wang, L.; Liu, X. F.; Zhang...
WOS:000504205900014 EI:20195007830342 10.1016/j.jcrysgro.2019.125362
收录情况：SCIE、EI、CPCI-S -
Tuning electronic properties of epitaxial multilayer-graphene/4H SiC (0001) by Joule heating decomposition in hydrogen
Journal of Physics and Chemistry of Solids,0022-3697,2020-02.
Sun, Cunzhi; Cai, Weiwei; Hong, Rongdun; Wu, Junkang; Chen, Xiaping; Cai, Jiafa; Zhang, Feng; Wu, Z...
WOS:000503086700023 EI:20194307575256 10.1016/j.jpcs.2019.109224
收录情况：SCIE、EI