已发表成果:
WOK 论文 37 篇;中文核心 2 篇;其它论文 2 篇;
High-performance perfect absorption infrared photodetectors with garphene-based SiC grating microstructures
Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC
Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO<sub>2</sub>/Si substrates
Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering
High-Performance SiC/Graphene UV-Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate
Interface-Engineering Induced Swift and Controllable Solar-Blind Photoresponse in Ga<sub>2</sub>O<sub>3</sub>/SiC Heterojunction Based on Unconventional Rectification Characteristics
Near-infrared tunable Tamm plasmons high-performance hot electron photodetector based on Ag/Ge2Sb2Te5 low Schottky barrier
A dual P-layer 4H-SiC p-i-n photodetector for the detection from extreme ultraviolet to ultraviolet-A
Metasurface-based perfect vortex beams with trigonometric-function topological charge for OAM manipulation
Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation
Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation
Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping
A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics
Room-Temperature Near-Infrared and Self-Powered Photodetectors Based on Graphite/WTe<sub>2</sub>/Ge Mixed Van Der Waals Heterostructure
Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticles in 4H-SiC Microholes
High-Speed and Responsivity 4H-SiC 8 x 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure
Study on SiC UV/EUV Coaxial Photodetector
SiC: An excellent platform for single-photon detection and emission
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Coordination multi-band absorbers with patterned irrelevant graphene patches based on multi-layer film structures
High performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors
2D WS2 Based Asymmetric Schottky Photodetector with High Performance
Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays
Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
A Survey on Modeling of SiC IGBT
The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC
High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET
Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H-SiC
Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias
Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling
Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4 degrees off-axis substrates
Tuning electronic properties of epitaxial multilayer-graphene/4H SiC (0001) by Joule heating decomposition in hydrogen
Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2/WSe2 p-n Junction on the 4H-SiC Substrate
The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition
Charge layer optimized 4H-SiC SACM avalanche photodiode with low breakdown voltage and high gain
宽禁带半导体SiC紫外光电探测器研究进展
厦门大学学报(自然科学版),0438-0479,2023-03-28.宽禁带半导体物理专题·编者按
中国科学:物理学 力学 天文学,1674-7275,2022-08-26.宽禁带半导体碳化硅IGBT器件研究进展与前瞻
电子与封装,1681-1070,2023-01-20.高压SiC MOSFET研究现状与展望
电子与封装,1681-1070,2023-01-20.