学者信息

张峰

物理科学与技术学院

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已发表成果:

WOK 论文 37 篇;中文核心 2 篇;其它论文 2 篇;

  • High-performance perfect absorption infrared photodetectors with garphene-based SiC grating microstructures

    PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS,1569-4410,2024-09.
    Liu, Yongjiang; Hu, Zheng-Da; Wu, Jingjing; Wang, Jicheng; Zhang, Feng
    WOS:001266824900001   EI:20242816659218   10.1016/j.photonics.2024.101292
    收录情况:SCIE、EI
  • Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC

    NANOTECHNOLOGY,0957-4484,2024-07-01.
    Zhu, Xiaogang; Shen, Zhanwei; Wang, Z. J.; Liu, Zhengran; Miao, Yuyang; Yue, Shizhong; Fu, Zhao; Li...
    WOS:001206590100001   EI:20241715981578   10.1088/1361-6528/ad3a6e
    收录情况:SCIE、EI
  • Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO<sub>2</sub>/Si substrates

    Journal of Physics D: Applied Physics,0022-3727,2024-06-14.
    He, Fuxiu; Jiao, Jinlong; Li, Zihao; Yao, Liqiang; Ji, Ruoyun; Wang, Dan; Hu, Yueping; Huang, Wei; ...
    WOS:001188031200001   EI:20241215795115   10.1088/1361-6463/ad32af
    收录情况:SCIE、EI
  • Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

    Journal of Physics D: Applied Physics,0022-3727,2024-05-24.
    Li, Zihao; Zhang, Mingkun; Fu, Zhao; Zhang, Zeyang; Wu, Shaoxiong; Zhang, Yuning; Lin, Dingqu; Hong...
    WOS:001176732700001   EI:20241015677500   10.1088/1361-6463/ad2bdb
    收录情况:SCIE、EI
  • High-Performance SiC/Graphene UV-Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

    ADVANCED OPTICAL MATERIALS,2195-1071,2024-05-10.
    Zhang, Zeyang; Sun, Cunzhi; Zhu, Baihong; Chen, Jiadong; Fu, Zhao; Li, Zihao; Wu, Shaoxiong; Zhang,...
    WOS:001217341700001   EI:20242016074801   10.1002/adom.202400469
    收录情况:SCIE、EI
  • Interface-Engineering Induced Swift and Controllable Solar-Blind Photoresponse in Ga<sub>2</sub>O<sub>3</sub>/SiC Heterojunction Based on Unconventional Rectification Characteristics

    ADVANCED FUNCTIONAL MATERIALS,1616-301X,2024-04-10.
    Wang, Zhiwei; Han, Keju; Huang, Hong; Zhao, Xiaolong; Zhan, Haoyan; Hou, Xiaohu; Feng, Xiao; Zhou, ...
    WOS:001199734000001   EI:20241515898123   10.1002/adfm.202400498
    收录情况:SCIE、EI
  • Near-infrared tunable Tamm plasmons high-performance hot electron photodetector based on Ag/Ge2Sb2Te5 low Schottky barrier

    OPTICS COMMUNICATIONS,0030-4018,2024-03-01.
    Zhang, Junjie; Li, Wenjun; Li, Bingtao; Hu, Zheng-Da; Wang, Jicheng; Zhang, Feng; Wang, Lei
    WOS:001127912700001   EI:20240215351614   10.1016/j.optcom.2023.130046
    收录情况:SCIE、EI
  • A dual P-layer 4H-SiC p-i-n photodetector for the detection from extreme ultraviolet to ultraviolet-A

    Electronics Letters,0013-5194,2023-09.
    Zhang, Ruijun; Liu, Jia; Liu, Geng; Yao, Liang; Liu, Ying; Hong, Rongdun; Zhang, Feng
    WOS:001066686300001   EI:20233814772725   10.1049/ell2.12953
    收录情况:SCIE、EI
  • Metasurface-based perfect vortex beams with trigonometric-function topological charge for OAM manipulation

    Optics Letters,0146-9592,2023-05-01.
    Zhang, Bolun; Hu, Zheng-Da; Wu, Jingjing; Wang, Jicheng; Nie, Yanguang; Zhang, Feng; Li, Mengmeng; ...
    WOS:000992171800003   EI:20231914077767   10.1364/OL.488701
    收录情况:SCIE、EI
  • Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

    Chinese Physics B,1674-1056,2023-05-01.
    Zhang, Ruijun; Hong, Rongdun; Han, Jingrui; Ting, Hungkit; Li, Xiguang; Cai, Jiafa; Chen, Xiaping; ...
    WOS:000992220100001   EI:20232214167554   10.1088/1674-1056/ac89db
    收录情况:SCIE、EI
  • Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation

    Applied Physics Letters,0003-6951,2023-04-17.
    Zhu, Baihong; Sun, Cunzhi; Chen, Jiadong; Li, Zihao; Huang, Shiming; Wu, Shaoxiong; Lin, Dingqu; Li...
    WOS:000973323100004   EI:20231814029082   10.1063/5.0145334
    收录情况:SCIE、EI
  • Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping

    Journal of Crystal Growth,0022-0248,2023-04-01.
    Shen, Zhanwei; Zhang, Feng; Liu, Xingfang; Sun, Guosheng; Zeng, Yiping
    WOS:000968230900001   EI:20230613541167   10.1016/j.jcrysgro.2023.127105
    收录情况:SCIE、EI
  • A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

    Journal of Semiconductors,1674-4926,2023-02.
    Wang, Xiaojie (1); Shen, Zhanwei (2); Zhang, Guoliang (1); Miao, Yuyang (1); Li, Tiange (1); Zhu, X...
    EI:20231213790581   10.1088/1674-4926/43/12/122802
    收录情况:EI
  • Room-Temperature Near-Infrared and Self-Powered Photodetectors Based on Graphite/WTe<sub>2</sub>/Ge Mixed Van Der Waals Heterostructure

    IEEE Transactions on Electron Devices,0018-9383,2023.
    Li, Hengyi; Huang, Jianming; Gao, Peng; Yang, Baoxiang; Lan, Zhibin; Gao, Wei; Zhang, Feng; Yang, M...
    WOS:000966961700001   EI:20231413850960   10.1109/TED.2023.3259928
    收录情况:SCIE、EI
  • Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticles in 4H-SiC Microholes

    ACS Applied Nano Materials,,2023.
    Yuan, Meng; Zhang, Mingkun; Fu, Zhao; Han, Shan; Zhang, Yuning; Wu, Shaoxiong; Hong, Rongdun; Chen,...
    WOS:001005196600001   EI:20232614308730   10.1021/acsanm.3c01080
    收录情况:SCIE、EI
  • High-Speed and Responsivity 4H-SiC 8 x 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure

    IEEE Transactions on Electron Devices,0018-9383,2023.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:001025576700001   EI:20232714340607   10.1109/TED.2023.3286379
    收录情况:SCIE、EI
  • Study on SiC UV/EUV Coaxial Photodetector

    Journal of Physics: Conference Series,1742-6588,2023.
    Liu, Geng (1); Yao, Liang (1); Liu, Ying (1); Hong, Rongdun (2, 3); Zhang, Ruijun (2); Zhang, Feng ...
    EI:20233614677400   10.1088/1742-6596/2549/1/012014
    收录情况:EI
  • SiC: An excellent platform for single-photon detection and emission

    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,1674-7348,2022-10.
    Zhang, Feng
    WOS:000846370800001   10.1007/s11433-022-1941-5
    收录情况:SCIE
  • Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

    arXiv,,2022-08-02.
    Sun, Cunzhi (1, 2, 3); Xiang, Cheng (2, 3); Hong, Rongdun (1); Zhang, Feng (1); Booth, Timothy J. (...
    EI:20220323051   10.48550/arXiv.2208.01351
    收录情况:EI
  • Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

    ACS Applied Electronic Materials,,2022.
    Sun, Cunzhi; Xiang, Cheng; Hong, Rongdun; Zhang, Feng; Booth, Timothy J.; Boggild, Peter; Doan, Man...
    WOS:000848016500001   EI:20223412623191   10.1021/acsaelm.2c00609
    收录情况:SCIE、EI
  • Coordination multi-band absorbers with patterned irrelevant graphene patches based on multi-layer film structures

    Journal of Physics D: Applied Physics,0022-3727,2021-12-16.
    Bao, Zhiyu; Wang, Jicheng; Hu, Zheng-Da; Chen, Yifan; Zhang, Chengliang; Zhang, Feng
    WOS:000701261800001   EI:20214111013730   10.1088/1361-6463/ac22d6
    收录情况:SCIE、EI
  • High performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors

    Journal of Materials Chemistry C,2050-7534,2021-11-21.
    Yue, Qian; Gao, Wei; Wen, Peiting; Chen, Quan; Yang, Mengmeng; Zheng, Zhaoqiang; Luo, Dongxiang; Hu...
    WOS:000713285100001   EI:20214711197364   10.1039/d1tc03884b
    收录情况:SCIE、EI
  • 2D WS2 Based Asymmetric Schottky Photodetector with High Performance

    ADVANCED ELECTRONIC MATERIALS,2199-160X,2021-07.
    Gao, Wei; Zhang, Shuai; Zhang, Feng; Wen, Peiting; Zhang, Li; Sun, Yiming; Chen, Hongyu; Zheng, Zha...
    WOS:000595431300001   10.1002/aelm.202000964
    收录情况:SCIE
  • Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays

    IEEE Electron Device Letters,0741-3106,2021.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:000736740500020   EI:20215011321531   10.1109/LED.2021.3132415
    收录情况:SCIE、EI
  • Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
    Yang, Fei; Tian, Lixin; Shen, Zhanwei; Yan, Guoguo; Liu, Xingfang; Zhao, Wanshun; Wang, Lei; Sun, G...
    WOS:000812299400015   EI:20220811682337   10.1109/WiPDAAsia51810.2021.9656100
    收录情况:EI、CPCI-S
  • A Survey on Modeling of SiC IGBT

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
    Wu, Yuwei; Wang, Laili; Wang, Jianpeng; Zhang, Feng
    WOS:000812299400047   EI:20220811682331   10.1109/WiPDAAsia51810.2021.9656094
    收录情况:EI、CPCI-S
  • The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
    Zhang, Ruijun; Hong, Rongdun; Cai, Jiafa; Chen, Xiaping; Lin, Dingqu; Zhang, Mingkun; Wu, Shaoxiong...
    WOS:000812299400054   EI:20220811682302   10.1109/WiPDAAsia51810.2021.9656062
    收录情况:EI、CPCI-S
  • High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET

    IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2020-10.
    Shen, Zhanwei; Zhang, Feng; Yan, Guoguo; Wen, Zhengxin; Zhao, Wanshun; Wang, Lei; Liu, Xingfang; Su...
    WOS:000572635400019   10.1109/TED.2020.3005899
    收录情况:SCIE
  • Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H-SiC

    Applied Physics Letters,0003-6951,2020-09-08.
    Shen, Zhanwei; Zhang, Feng; Chen, Jun; Fu, Zhao; Liu, Xingfang; Yan, Guoguo; Lv, Bowen; Wang, Yinsh...
    WOS:000571939200002   EI:20203909246622   10.1063/5.0018330
    收录情况:SCIE、EI
  • Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias

    Applied Physics Letters,0003-6951,2020-08-17.
    Sun, Cunzhi; Chen, Xiufang; Hong, Rongdun; Li, Xiaomeng; Xu, Xiangang; Chen, Xiaping; Cai, Jiafa; Z...
    WOS:000563577600001   EI:20204509457651   10.1063/5.0012566
    收录情况:SCIE、EI
  • Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling

    Journal of Crystal Growth,0022-0248,2020-02-01.
    He, Yawei; Yan, Guoguo; Shen, Zhanwei; Zhao, Wanshun; Wang, Lei; Liu, Xingfang; Sun, Guosheng; Zhan...
    WOS:000504205900030   EI:20194707718598   10.1016/j.jcrysgro.2019.125352
    收录情况:SCIE、EI、CPCI-S
  • Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4 degrees off-axis substrates

    Journal of Crystal Growth,0022-0248,2020-02-01.
    Yan, G. G.; He, Y. W.; Shen, Z. W.; Cui, Y. X.; Li, J. T.; Zhao, W. S.; Wang, L.; Liu, X. F.; Zhang...
    WOS:000504205900014   EI:20195007830342   10.1016/j.jcrysgro.2019.125362
    收录情况:SCIE、EI、CPCI-S
  • Tuning electronic properties of epitaxial multilayer-graphene/4H SiC (0001) by Joule heating decomposition in hydrogen

    Journal of Physics and Chemistry of Solids,0022-3697,2020-02.
    Sun, Cunzhi; Cai, Weiwei; Hong, Rongdun; Wu, Junkang; Chen, Xiaping; Cai, Jiafa; Zhang, Feng; Wu, Z...
    WOS:000503086700023   EI:20194307575256   10.1016/j.jpcs.2019.109224
    收录情况:SCIE、EI
  • Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

    CHINESE PHYSICS B,1674-1056,2019-06.
    Wen, ZX; Zhang, F; Shen, ZW; Chen, J; He, YW; Yan, GG; Liu, XF; Zhao, WS; Wang, L; Sun, GS; Zeng, YP
    WOS:000471658600003   EI:20193007238398   10.1088/1674-1056/28/6/068504
    收录情况:SCIE、EI
  • Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2/WSe2 p-n Junction on the 4H-SiC Substrate

    ACS APPLIED MATERIALS & INTERFACES,1944-8244,2019-05-29.
    Gao, W; Zhang, F; Zheng, ZQ; Li, JB
    WOS:000470034700042   EI:20192407024143   10.1021/acsami.9b03709
    收录情况:SCIE、EI
  • The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,1369-8001,2019-05.
    Chen, J; Lv, BW; Zhang, F; Wang, YS; Liu, XF; Yan, GG; Shen, ZW; Wen, ZX; Wang, L; Zhao, WS; Sun, G...
    WOS:000458507800014   EI:20190606474828   10.1016/j.mssp.2019.01.045
    收录情况:SCIE、EI
  • Charge layer optimized 4H-SiC SACM avalanche photodiode with low breakdown voltage and high gain

    Japanese Journal of Applied Physics,0021-4922,2019.
    Wu, Junkang (1); Zhang, Mingkun (2); Fu, Zhao (1); Hong, Rongdun (1); Zhang, Feng (1); Cai, Jiafa (...
    WOS:000497996000003   EI:20194207539448   10.7567/1347-4065/ab4756
    收录情况:SCIE、EI
  • 宽禁带半导体SiC紫外光电探测器研究进展

    厦门大学学报(自然科学版),0438-0479,2023-03-28.
    张峰;付钊;张泽阳;李子豪;吴正云
    CSCD扩展库
  • 宽禁带半导体物理专题·编者按

    中国科学:物理学 力学 天文学,1674-7275,2022-08-26.
    张峰;刘斌
    CSCD核心
  • 宽禁带半导体碳化硅IGBT器件研究进展与前瞻

    电子与封装,1681-1070,2023-01-20.
    张峰;张国良
  • 高压SiC MOSFET研究现状与展望

    电子与封装,1681-1070,2023-01-20.
    孙培元;孙立杰;薛哲;佘晓亮;韩若麟;吴宇薇;王来利;张峰