学者信息

郑志威 (ZhiWei Zheng)

电子科学与技术学院(国家示范性微电子学院)

按发表年份分组
按发表刊物分组
合作者

已发表成果:

WOK 论文 62 篇;中文核心 3 篇;专利发明 2 个;

  • Photoluminescence of green InGaN/GaN MQWs grown on pre-wells*

    Chinese Physics B,1674-1056,2020-12.
    Lai, Shou-Qiang; Li, Qing-Xuan; Long, Hao; Wu, Jin-Zhao; Ying, Lei-Ying; Zheng, Zhi-Wei; Qiu, Zhi-R...
    WOS:000597769700001   EI:20210109713813   10.1088/1674-1056/abb65b
    收录情况:SCIE、EI
  • Research on Auto-split GaN-based Vertical Structure LED

    Guangzi Xuebao/Acta Photonica Sinica,1004-4213,2020-12.
    Su, Xu-Liang (1); Wang, Can (1); Ying, Lei-Ying (1); Xu, Huan (1); Xu, Rong-Bin (1); Mei, Yang (1);...
    EI:20210209739130   10.3788/gzxb20204912.1223004
    收录情况:EI
  • Optical properties of organic neodymium complex doped optical waveguides based on the intramolecular energy transfer effect

    Optical Materials Express,2159-3930,2020-10-01.
    Zhan, Hong; Zhang, Jing; Fan, Wang; Zhang, Baoping; Ying, Leiying; Xie, Guohua; Lin, Zhensheng; Che...
    WOS:000578026100030   EI:20204209341313   10.1364/OME.400344
    收录情况:SCIE、EI
  • Photoassisted chemical smoothing of AlGaN surface after laser lift-off

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,2166-2746,2020-07-01.
    Zheng, Zhongming; Long, Hao; Matta, Samuel; Leroux, Mathieu; Brault, Julien; Ying, Leiying; Zheng, ...
    WOS:000569111300001   EI:20204109335665   10.1116/6.0000192
    收录情况:SCIE、EI
  • A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

    Thin Solid Films,0040-6090,2020-05-01.
    Lee, Tsung-Ming; Lin, Chien-Liang; Fan, Yu-Chi; Lee, Sheng; Liu, Wei-Dong; Liu, Hsiu-Ming; Huang, Z...
    WOS:000525745900001   EI:20201208317322   10.1016/j.tsf.2020.137927
    收录情况:SCIE、EI
  • Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

    IEEE PHOTONICS JOURNAL,1943-0655,2020-04.
    Xu, Rongbin; Mei, Yang; Xu, Huan; Yang, Tianrui; Ying, Leiying; Zheng, Zhiwei; Long, Hao; Zhang, Ba...
    WOS:000522431700001   EI:20201508402802   10.1109/JPHOT.2020.2979564
    收录情况:SCIE、EI
  • Influence of Photo-electron Coupling on Optical Properties of InGaN/GaN Quantum Wells

    Faguang Xuebao/Chinese Journal of Luminescence,1000-7032,2020-01-01.
    Chen, Lan (1); Wu, Jin-Zhao (1); Long, Hao (1); Shi, Xiao-Ling (1); Ying, Lei-Ying (1); Zheng, Zhi-...
    EI:20202108685727   10.3788/fgxb20204101.0048
    收录情况:EI
  • Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

    IEEE Journal of the Electron Devices Society,2168-6734,2020.
    Shang, Z. W.; Ma, J.; Liu, W. D.; Fan, Y. C.; Hsu, H. H.; Zheng, Z. W.; Cheng, C. H.
    WOS:000536054900005   EI:20202108696352   10.1109/JEDS.2020.2986172
    收录情况:SCIE、EI
  • Impact of Series-Connected Ferroelectric Capacitor in HfO2-Based Ferroelectric Field-Effect Transistors for Memory Application

    IEEE Journal of the Electron Devices Society,2168-6734,2020.
    Liu, Wei-Dong; Huang, Zi-You; Ma, Jun; Zheng, Zhi-Wei; Cheng, Chun-Hu
    WOS:000583694000001   EI:20204209342869   10.1109/JEDS.2020.3029268
    收录情况:SCIE、EI
  • Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

    IEEE TRANSACTIONS ON NANOTECHNOLOGY,1536-125X,2020.
    Ma, Jun; Liu, Chien; Liu, Wei-Dong; Hung, Yu-Wen; Fan, Yu-Chi; Hsu, Hsiao-Hsuan; Zheng, Zhi-Wei; Ch...
    WOS:000507878200002   EI:20200408084356   10.1109/TNANO.2019.2961631
    收录情况:SCIE、EI
  • Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices

    IEEE Photonics Technology Letters,1041-1135,2020.
    Chen, Yan-Hui; Mei, Yang; Xu, Huan; Xu, Rong-Bin; Ying, Lei-Ying; Zheng, Zhi-Wei; Long, Hao; Zhang,...
    WOS:000597780400005   EI:20204909595126   10.1109/LPT.2020.3040550
    收录情况:SCIE、EI
  • 自分裂GaN基垂直结构LED研究

    光子学报,1004-4213,2020-12-01.
    苏旭良;王灿;应磊莹;徐欢;许荣彬;梅洋;郑志威;龙浩;张保平
    CSCD核心
  • 光电耦合对InGaN/GaN量子阱光学性能的影响

    发光学报,1000-7032,2020-01-15.
    陈澜;吴瑾照;龙浩;史晓玲;应磊莹;郑志威;丘志仁;张保平
    CSCD核心