学者信息

郑志威 (ZhiWei Zheng)

电子科学与技术学院(国家示范性微电子学院)

按发表年份分组
按发表刊物分组
合作者

已发表成果:

WOK 论文 62 篇;中文核心 3 篇;专利发明 2 个;

  • Improved β-Ga 2 O 3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer

    Micro and Nanostructures,,2024-06.
    Chen, Shutao; Du, Song; Wang, Kaikai; Qiao, Liang; Zhang, Chuanlun; Yang, Weifeng; Li, Qiang; Zheng...
    WOS:001219189800001   EI:20241515868459   10.1016/j.micrna.2024.207831
    收录情况:SCIE、EI
  • Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics

    MATERIALS RESEARCH EXPRESS,,2024-04-01.
    Liu, Cun-Bo; Liao, Ruo-Yin; Chen, Hsuan-Han; Zheng, Zhi-Wei; Su, Kuan-Hung; Lin, I-Cheng; Liang, Ti...
    WOS:001209450300001   EI:20241916037017   10.1088/2053-1591/ad4005
    收录情况:SCIE、EI
  • Artificial Synaptic Transistors Based on Konjac Glucomannan for Brain-Inspired Neuromorphic Applications

    ACS APPLIED ELECTRONIC MATERIALS,,2024-02-08.
    Huang, Kun-Wen; Zhu, Lei; Ying, Lei-Ying; Zhang, Bao-Ping; Zheng, Zhi-Wei
    WOS:001166426100001   EI:20240815594985   10.1021/acsaelm.4c00066
    收录情况:SCIE、EI
  • Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog-Radio-Frequency Applications

    IEEE TRANSACTIONS ON NANOTECHNOLOGY,1536-125X,2024.
    Cheng, Tian-Tong; Li, Qiang; Yang, Yu-Xi; Zheng, Zhi-Wei
    WOS:001204967400003   EI:20241615918302   10.1109/TNANO.2024.3384968
    收录情况:SCIE、EI
  • A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application

    IEEE Electron Device Letters,0741-3106,2024.
    Chen, Jiewen; Xu, Qian; Li, Yang; Cao, Jie; Liu, Xusheng; Qiu, Jie; Chen, Yan; Liu, Mengyang; Yu, J...
    WOS:001230989200010   EI:20241615931641   10.1109/LED.2024.3387455
    收录情况:SCIE、EI
  • Impact of Random Interface Traps Fluctuation on Device Variation of Oxide-Semiconductor Ferroelectric Field-Effect Transistor Memories

    IEEE Electron Device Letters,0741-3106,2023-12-01.
    Li, Qiang; Yang, Yu-Xi; Cheng, Tian-Tong; Ying, Lei-Ying; Zhang, Bao-Ping; Zheng, Zhi-Wei
    WOS:001152564000028   EI:20235015193015   10.1109/LED.2023.3329493
    收录情况:SCIE、EI
  • Current spreading structure of GaN-based vertical-cavity surface-emitting lasers

    Optics Letters,0146-9592,2023-10.
    Zheng, Zhongming; Wang, Yukun; Mei, Yang; Long, Hao; Ying, Leiying; Zheng, Zhiwei; Zhang, Baoping
    WOS:001092087000002   EI:20234314943767   10.1364/OL.499036
    收录情况:SCIE、EI
  • Effects of different current confinement layers in GaN-based VCSELs

    AIP Advances,,2023-07-01.
    Chen, Yan-Hui; Mei, Yang; Zheng, Zhong-Ming; Xu, Rong-Bin; Wang, Ya-Chao; Ying, Lei-Ying; Zheng, Zh...
    WOS:001029377300005   EI:20233014430896   10.1063/5.0155159
    收录情况:SCIE、EI
  • Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

    Semiconductor Science and Technology,0268-1242,2023-05.
    Li, Qiang; Li, Ming-Hao; Hsu, Hsiao-Hsuan; Ying, Lei-Ying; Zhang, Bao-Ping; Zheng, Zhi-Wei
    WOS:000960221200001   EI:20231413856956   10.1088/1361-6641/acc547
    收录情况:SCIE、EI
  • The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs

    Semiconductor Science and Technology,0268-1242,2023-04.
    Li, Ming-Hao; Li, Qiang; Hsu, Hsiao-Hsuan; Ying, Lei-Ying; Zhang, Bao-Ping; Zheng, Zhi-Wei
    WOS:000937564600001   EI:20230913655890   10.1088/1361-6641/acb8a7
    收录情况:SCIE、EI
  • Optical gain at 1.55 μm of Er(TMHD)<sub>3</sub> complex doped polymer waveguides based on the intramolecular energy transfer effect

    Optics Express,1094-4087,2023-02-01.
    Zhu, Jiyun; Zhang, Baoping; Huang, Yuyang; Lv, Ziyue; Ying, Leiying; Mei, Yang; Zheng, Zhiwei; Zhan...
    WOS:000942082400008   EI:20230613553608   10.1364/OE.479180
    收录情况:SCIE、EI
  • High-quality AlGaN epitaxial structures and realization of UVC vertical-cavity surface-emitting lasers

    Science China Materials,2095-8226,2023.
    Zheng, Zhongming; Wang, Yukun; Hoo, Jason; Guo, Shiping; Mei, Yang; Long, Hao; Ying, Leiying; Zheng...
    WOS:000921251000001   EI:20230413430049   10.1007/s40843-022-2310-5
    收录情况:SCIE、EI
  • Oxide-based synaptic transistors gated by solid biopolymer electrolytes

    Journal of Materials Science,0022-2461,2023.
    Ding, Yao-Xin; Huang, Kun-Wen; Chen, Jie-Wen; Hsu, Hsiao-Hsuan; Ying, Lei-Ying; Zhang, Bao-Ping; Zh...
    WOS:001031399500001   EI:20232914408940   10.1007/s10853-023-08746-3
    收录情况:SCIE、EI
  • Physical Insights Into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain Models

    IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2022-12.
    Li, Ming-Hao; He, Guan-You; Li, Qiang; Ying, Lei-Ying; Zhang, Bao-Ping; Zheng, Zhi-Wei
    WOS:000910009400001   EI:20230313394441   10.1109/TED.2022.3231227
    收录情况:SCIE、EI
  • Effects of fluorine plasma pre-treatment on electrical properties of high-kappa-based InP metal-oxide-semiconductor device

    Applied Surface Science,0169-4332,2022-05-30.
    Xu, Qian; Liu, Wei-Dong; Ding, Yao-Xin; Zheng, Zhi-Wei; Ying, Lei-Ying; Zhang, Bao-Ping
    WOS:000784418000001   EI:20220711639783   10.1016/j.apsusc.2022.152688
    收录情况:SCIE、EI
  • Optical Gain at 637 nm Wavelength in Polymer Waveguide Amplifier Under Commercial LED Pumping for Planar Photonic Integration

    Advanced Optical Materials,2195-1071,2022.
    Wang, Ce; Liu, Xin; Zhang, Baoping; Xie, Guohua; Zhou, Zhaoqin; Yang, Xingchen; Ying, Leiying; Mei,...
    WOS:000800653500001   EI:20222212164520   10.1002/adom.202200205
    收录情况:SCIE、EI
  • Classification of Analog Circuits Based on Graph Convolution Network

    Proceedings of the International Conference on Anti-Counterfeiting, Security and Identification, ASID,2163-5048,2022.
    Zheng, Zhiwei (1, 2); Zhang, Xiongbo (1); Wang, Yuefan (1); He, Shan (1); Huang, Chao (2); Li, Lin ...
    EI:20230313408846   10.1109/ASID56930.2022.9996007
    收录情况:EI
  • Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY,0268-1242,2021-12.
    Xu, Qian; Ding, Yao-Xin; Zheng, Zhi-Wei; Ying, Lei-Ying; Zhang, Bao-Ping
    WOS:000717269300001   EI:20214811241746   10.1088/1361-6641/ac2fb6
    收录情况:SCIE、EI
  • Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer

    Superlattices and Microstructures,0749-6036,2021-07.
    Lai, Shouqiang; Li, Qinxuan; Long, Hao; Ying, Leiying; Zheng, Zhiwei; Zhang, Baoping
    WOS:000663410600009   EI:20211910345001   10.1016/j.spmi.2021.106906
    收录情况:SCIE、EI
  • High Q factor Electrically Injected Green Micro Cavity

    JOURNAL OF LIGHTWAVE TECHNOLOGY,0733-8724,2021-05-01.
    Mei, Yang; Chen, Yan-Hui; Ying, Lei-Ying; Zheng, Zhi-Wei; Long, Hao; Zhang, Bao-Ping
    WOS:000641969000027   10.1109/JLT.2021.3053213
    收录情况:SCIE
  • Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping

    Applied Physics Letters,0003-6951,2021-04-26.
    Zhou, Zhaoqin; Xue, Jiabi; Zhang, Baoping; Wang, Ce; Yang, Xingchen; Fan, Wang; Ying, Leiying; Zhen...
    WOS:000691321000001   EI:20211810293742   10.1063/5.0047509
    收录情况:SCIE、EI
  • AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser

    IEEE ELECTRON DEVICE LETTERS,0741-3106,2021-03.
    Zheng, Zhongming; Mei, Yang; Long, Hao; Hoo, Jason; Guo, Shiping; Li, Qingxuan; Ying, Leiying; Zhen...
    WOS:000622098100020   10.1109/LED.2021.3052725
    收录情况:SCIE
  • Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

    Journal of Materials Science,0022-2461,2021.
    Shang, Zong-Wei; Xu, Qian; He, Guan-You; Zheng, Zhi-Wei; Cheng, Chun-Hu
    WOS:000604580400009   EI:20210109732363   10.1007/s10853-020-05708-x
    收录情况:SCIE、EI
  • Photoluminescence of green InGaN/GaN MQWs grown on pre-wells*

    Chinese Physics B,1674-1056,2020-12.
    Lai, Shou-Qiang; Li, Qing-Xuan; Long, Hao; Wu, Jin-Zhao; Ying, Lei-Ying; Zheng, Zhi-Wei; Qiu, Zhi-R...
    WOS:000597769700001   EI:20210109713813   10.1088/1674-1056/abb65b
    收录情况:SCIE、EI
  • Research on Auto-split GaN-based Vertical Structure LED

    Guangzi Xuebao/Acta Photonica Sinica,1004-4213,2020-12.
    Su, Xu-Liang (1); Wang, Can (1); Ying, Lei-Ying (1); Xu, Huan (1); Xu, Rong-Bin (1); Mei, Yang (1);...
    EI:20210209739130   10.3788/gzxb20204912.1223004
    收录情况:EI
  • Optical properties of organic neodymium complex doped optical waveguides based on the intramolecular energy transfer effect

    Optical Materials Express,2159-3930,2020-10-01.
    Zhan, Hong; Zhang, Jing; Fan, Wang; Zhang, Baoping; Ying, Leiying; Xie, Guohua; Lin, Zhensheng; Che...
    WOS:000578026100030   EI:20204209341313   10.1364/OME.400344
    收录情况:SCIE、EI
  • Photoassisted chemical smoothing of AlGaN surface after laser lift-off

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,2166-2746,2020-07-01.
    Zheng, Zhongming; Long, Hao; Matta, Samuel; Leroux, Mathieu; Brault, Julien; Ying, Leiying; Zheng, ...
    WOS:000569111300001   EI:20204109335665   10.1116/6.0000192
    收录情况:SCIE、EI
  • A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

    Thin Solid Films,0040-6090,2020-05-01.
    Lee, Tsung-Ming; Lin, Chien-Liang; Fan, Yu-Chi; Lee, Sheng; Liu, Wei-Dong; Liu, Hsiu-Ming; Huang, Z...
    WOS:000525745900001   EI:20201208317322   10.1016/j.tsf.2020.137927
    收录情况:SCIE、EI
  • Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

    IEEE PHOTONICS JOURNAL,1943-0655,2020-04.
    Xu, Rongbin; Mei, Yang; Xu, Huan; Yang, Tianrui; Ying, Leiying; Zheng, Zhiwei; Long, Hao; Zhang, Ba...
    WOS:000522431700001   EI:20201508402802   10.1109/JPHOT.2020.2979564
    收录情况:SCIE、EI
  • Influence of Photo-electron Coupling on Optical Properties of InGaN/GaN Quantum Wells

    Faguang Xuebao/Chinese Journal of Luminescence,1000-7032,2020-01-01.
    Chen, Lan (1); Wu, Jin-Zhao (1); Long, Hao (1); Shi, Xiao-Ling (1); Ying, Lei-Ying (1); Zheng, Zhi-...
    EI:20202108685727   10.3788/fgxb20204101.0048
    收录情况:EI
  • Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

    IEEE Journal of the Electron Devices Society,2168-6734,2020.
    Shang, Z. W.; Ma, J.; Liu, W. D.; Fan, Y. C.; Hsu, H. H.; Zheng, Z. W.; Cheng, C. H.
    WOS:000536054900005   EI:20202108696352   10.1109/JEDS.2020.2986172
    收录情况:SCIE、EI
  • Impact of Series-Connected Ferroelectric Capacitor in HfO2-Based Ferroelectric Field-Effect Transistors for Memory Application

    IEEE Journal of the Electron Devices Society,2168-6734,2020.
    Liu, Wei-Dong; Huang, Zi-You; Ma, Jun; Zheng, Zhi-Wei; Cheng, Chun-Hu
    WOS:000583694000001   EI:20204209342869   10.1109/JEDS.2020.3029268
    收录情况:SCIE、EI
  • Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

    IEEE TRANSACTIONS ON NANOTECHNOLOGY,1536-125X,2020.
    Ma, Jun; Liu, Chien; Liu, Wei-Dong; Hung, Yu-Wen; Fan, Yu-Chi; Hsu, Hsiao-Hsuan; Zheng, Zhi-Wei; Ch...
    WOS:000507878200002   EI:20200408084356   10.1109/TNANO.2019.2961631
    收录情况:SCIE、EI
  • Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices

    IEEE Photonics Technology Letters,1041-1135,2020.
    Chen, Yan-Hui; Mei, Yang; Xu, Huan; Xu, Rong-Bin; Ying, Lei-Ying; Zheng, Zhi-Wei; Long, Hao; Zhang,...
    WOS:000597780400005   EI:20204909595126   10.1109/LPT.2020.3040550
    收录情况:SCIE、EI
  • Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

    Physica Status Solidi - Rapid Research Letters,1862-6254,2019-12-01.
    Liu, Chien (1); Tung, Yi-Chun (2); Wu, Tian-Li (3); Cheng, Chun-Hu (4); Tseng, Chih-Yang (2); Chen,...
    EI:20195107856917   10.1002/pssr.201900414
    收录情况:EI
  • Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes

    Journal of Luminescence,0022-2313,2019-12.
    Xu, Rong-Bin (1); Xu, Huan (1); Mei, Yang (1); Shi, Xiao-Ling (1); Ying, Lei-Ying (1); Zheng, Zhi-W...
    WOS:000493395400019   EI:20193507362969   10.1016/j.jlumin.2019.116717
    收录情况:SCIE、EI
  • Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

    2019 8th International Symposium on Next Generation Electronics, ISNE 2019,,2019-10.
    Shang, Zong-Wei (1); Ma, Jun (1); Liu, Wei-Dong (1); Zheng, Zhi-Wei (1); Cheng, Chun-Hu (2)
    EI:20194807767874   10.1109/ISNE.2019.8896500
    收录情况:EI
  • Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2162-8769,2019-09-17.
    Liu, C; Tung, YC; Tseng, CY; Wang, WC; Chen, HH; Lee, TM; Chou, WC; Zheng, ZW; Cheng, CH; Hsu, HH
    WOS:000486488400002   EI:20194307589584   10.1149/2.0041910jss
    收录情况:SCIE、EI
  • Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,1533-4880,2019-09.
    Chen, YL; Liou, GL; Hsu, HH; Chen, PC; Zheng, ZW; Wu, YH; Cheng, CH; Liu, CH; Chung, LH
    WOS:000463891600029   10.1166/jnn.2019.16563
    收录情况:SCIE
  • Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

    Vacuum,0042-207X,2019-08.
    Chang, Tun-Jen (1); Liu, Chien (2); Fan, Chia-Chi (1); Hsu, Hsiao-Hsuan (3); Chen, Hsuan-Han (2); C...
    WOS:000472990900003   EI:20191806852247   10.1016/j.vacuum.2019.04.045
    收录情况:SCIE、EI
  • Large Rabi splitting in InGaN quantum wells microcavity at room temperature

    MATERIALS RESEARCH EXPRESS,2053-1591,2019-07.
    Wu, JZ; Shi, XL; Long, H; Chen, L; Ying, LY; Zheng, ZW; Zhang, BP
    WOS:000466009900001   EI:20192206977189   10.1088/2053-1591/ab1a05
    收录情况:SCIE、EI
  • Theoretical optimization of inhomogeneous broadening in InGaN/GaN MQWs to polariton splitting at low temperature

    Superlattices and Microstructures,0749-6036,2019-04.
    Shi, Xiaoling (1); Long, Hao (1); Wu, JinZhao (1); Chen, Lan (1); Ying, Leiying (1); Zheng, Zhiwei ...
    WOS:000463693300019   EI:20190606469668   10.1016/j.spmi.2019.01.021
    收录情况:SCIE、EI
  • Progress and challenges in p-type oxide-based thin film transistors

    NANOTECHNOLOGY REVIEWS,2191-9089,2019-01.
    Shang, ZW; Hsu, HH; Zheng, ZW; Cheng, CH
    WOS:000503467600001   EI:20200408090151   10.1515/ntrev-2019-0038
    收录情况:SCIE、EI
  • Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers

    Proceedings of SPIE - The International Society for Optical Engineering,0277-786X,2019.
    Mei, Y. (1); Xu, R.B. (1); Ying, L.Y. (1); Liu, J.P. (2); Zheng, Z.W. (1); Long, H. (1); Zhang, B.P...
    EI:20192106948849   10.1117/12.2511293
    收录情况:EI
  • Polariton lasing in InGaN quantum wells at room temperature

    Opto-Electronic Advances,2096-4579,2019.
    Wu, Jin Zhao (1); Long, Hao (1); Shi, Xiao Ling (1); Luo, Song (2); Chen, Zhang Hai (2); Feng, Zhe ...
    EI:20212810640097   10.29026/oea.2019.190014
    收录情况:EI
  • Loss analysis in nitride deep ultraviolet planar cavity

    Journal of Nanophotonics,1934-2608,2018-10-01.
    Zheng, Zhongming (1); Li, Yingqian (1); Paul, Onkundi (1); Long, Hao (1); Matta, Samuel (2); Leroux...
    WOS:000456813200005   EI:20182305269497   10.1117/1.JNP.12.043504
    收录情况:SCIE、EI
  • Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination

    IEEE Transactions on Electron Devices,0018-9383,2018-09-01.
    Xu, Rongbin (1); Mei, Yang (1); Xu, Huan (1); Ying, Lei-Ying (1); Zheng, Zhiwei (1); Long, Hao (1);...
    WOS:000445239700050   EI:20183705791322   10.1109/TED.2018.2866406
    收录情况:SCIE、EI
  • Weighted total variation using split Bregman fast quantitative susceptibility mapping reconstruction method

    CHINESE PHYSICS B,1674-1056,2018-08.
    Chen, L; Zheng, ZW; Bao, LJ; Fang, JS; Yang, TH; Cai, SH; Cai, CB
    WOS:000442034400001   EI:20183405716380   10.1088/1674-1056/27/8/088701
    收录情况:SCIE、EI
  • Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths

    IEEE Transactions on Electron Devices,0018-9383,2018-04-26.
    Wu, Jin-Zhao(1); Long, Hao(2); Shi, Xiao-Ling(1); Ying, Lei-Ying(1); Zheng, Zhi-Wei(1); Zhang, Bao-...
    WOS:000432462200066   EI:20181905146517   10.1109/TED.2018.2825992
    收录情况:SCIE、EI
  • Abnormal staircase-like I-V curve in InGaN quantum well solar cells

    APPLIED PHYSICS LETTERS,0003-6951,2018-04-16.
    Cai, X. M.; Zheng, Z. W.; Long, H.; Ying, L. Y.; Zhang, B. P.
    WOS:000430569400002   EI:20181705053442   10.1063/1.5018481
    收录情况:SCIE、EI
  • A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY,0268-1242,2018-01.
    Mei, Yang; Xu, Rong-Bin; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Zhang, Bao-Ping; Li, Mo; Zhang, ...
    WOS:000417913700005   EI:20175204572229   10.1088/1361-6641/aa90aa
    收录情况:SCIE、EI
  • Progress and prospects of GaN-based VCSEL from near UV to green emission

    Progress in Quantum Electronics,0079-6727,2018.
    Yu, Hsin-chieh(1); Zheng, Zhi-wei(2); Mei, Yang(2); Xu, Rong-bin(2); Liu, Jian-ping(3); Yang, Hui(3...
    WOS:000433017400001   EI:20181104898475   10.1016/j.pquantelec.2018.02.001
    收录情况:SCIE、EI
  • Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2162-8769,2018 .
    Zhou, L. M.; Ren, B. C.; Zheng, Z. W.; Ying, L. Y.; Long, H.; Zhang, B. P.
    WOS:000428118600027   EI:20201808596858   10.1149/2.0221803jss
    收录情况:SCIE、EI
  • Simultaneous blue and green lasing of GaN-based vertical-cavity surface-emitting lasers

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY,0268-1242,2017-10.
    Xu, R. B.; Mei, Y.; Zhang, B. P.; Ying, L. Y.; Zheng, Z. W.; Hofmann, W.; Liu, J. P.; Yang, H.; Li,...
    WOS:000410596500001   EI:20174004229473   10.1088/1361-6641/aa87aa
    收录情况:SCIE、EI
  • Tunable InGaN quantum dot microcavity light emitters with 129nm tuning range from yellow-green to violet

    APPLIED PHYSICS LETTERS,0003-6951,2017-09-18.
    Mei, Yang; Xu, Rong-Bin; Weng, Guo-En; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Long, Hao; Zhang, ...
    WOS:000411646300007   10.1063/1.4994945
    收录情况:SCIE
  • Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

    JOURNAL OF ALLOYS AND COMPOUNDS,0925-8388,2017-06-15.
    Chen, Po-Chun; Chiu, Yu-Chien; Zheng, Zhi-Wei; Cheng, Chun-Hu; Wu, Yung-Hsien
    WOS:000400709800029   10.1016/j.jallcom.2016.11.294
    收录情况:SCIE
  • Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

    Applied Physics A: Materials Science and Processing,0947-8396,2017-03-01.
    Chiu, Y.C.(1); Zheng, Z.W.(2); Cheng, C.H.(3); Chen, P.C.(4); Yen, S.S.(1); Fan, C.C.(1); Hsu, H.H....
    EI:20170903401341   10.1007/s00339-017-0831-7``
    收录情况:EI
  • Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,0947-8396,2017-03.
    Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L...
    WOS:000397576400008   EI:20211410163004   10.1007/s00339-017-0831-7
    收录情况:SCIE、EI
  • Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment

    IEEE Electron Device Letters,0741-3106,2017-02.
    Chen, Po-Chun(1); Chiu, Yu-Chien(2); Liou, Guan-Lin(3); Zheng, Zhi-Wei(4); Cheng, Chun-Hu(3); Wu, Y...
    WOS:000395470700015   EI:20170603324553   10.1109/LED.2016.2646378
    收录情况:SCIE、EI
  • Modulation characteristics of GaN-based light-emitting-diodes for visible light communication

    ECS Journal of Solid State Science and Technology,2162-8769,2017.
    Zheng, Z.W.(1); Yu, H.(1); Ren, B.C.(1); Zhou, L.M.(1); Fu, H.Y.(1); Cheng, X.(2); Ying, L.Y.(1); L...
    WOS:000418363500032   EI:20174604411951   10.1149/2.0301709jss
    收录情况:SCIE、EI
  • Channel modification engineering by plasma processing in tin-oxide thin film transistor: Experimental results and first-principles calculation

    ECS Journal of Solid State Science and Technology,2162-8769,2017.
    Chiu, Y.C.(1); Chen, P.C.(2); Chang, S.L.(3); Zheng, Z.W.(4); Cheng, C.H.(5); Liou, G.L.(5); Kao, H...
    WOS:000419132500001   EI:20175104546084   10.1149/2.0251704jss
    收录情况:SCIE、EI
  • Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells

    Vacuum,0042-207X,2016-06-29.
    Zheng, Z.W.(1); Yu, J.(1); Lai, M.H.(1); Ying, L.Y.(1); Zhang, B.P.(1)
    WOS:000401382300016   EI:20170203224831   10.1016/j.vacuum.2016.12.011
    收录情况:SCIE、EI、CPCI-S
  • 自分裂GaN基垂直结构LED研究

    光子学报,1004-4213,2020-12-01.
    苏旭良;王灿;应磊莹;徐欢;许荣彬;梅洋;郑志威;龙浩;张保平
    CSCD核心
  • 光电耦合对InGaN/GaN量子阱光学性能的影响

    发光学报,1000-7032,2020-01-15.
    陈澜;吴瑾照;龙浩;史晓玲;应磊莹;郑志威;丘志仁;张保平
    CSCD核心
  • 垂直结构GaN基LED用Ni / Ag反射镜电极

    半导体技术,1003-353X,2017.
    卜庆典;周伦茂;龙浩;应磊莹;郑志威;张保平
    CSCD扩展