已发表成果:
WOK 论文 62 篇;中文核心 3 篇;专利发明 2 个;
Improved β-Ga 2 O 3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer
Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics
Artificial Synaptic Transistors Based on Konjac Glucomannan for Brain-Inspired Neuromorphic Applications
Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog-Radio-Frequency Applications
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application
Impact of Random Interface Traps Fluctuation on Device Variation of Oxide-Semiconductor Ferroelectric Field-Effect Transistor Memories
Current spreading structure of GaN-based vertical-cavity surface-emitting lasers
Effects of different current confinement layers in GaN-based VCSELs
Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs
Optical gain at 1.55 μm of Er(TMHD)<sub>3</sub> complex doped polymer waveguides based on the intramolecular energy transfer effect
High-quality AlGaN epitaxial structures and realization of UVC vertical-cavity surface-emitting lasers
Oxide-based synaptic transistors gated by solid biopolymer electrolytes
Physical Insights Into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain Models
Effects of fluorine plasma pre-treatment on electrical properties of high-kappa-based InP metal-oxide-semiconductor device
Optical Gain at 637 nm Wavelength in Polymer Waveguide Amplifier Under Commercial LED Pumping for Planar Photonic Integration
Classification of Analog Circuits Based on Graph Convolution Network
Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide
Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer
High Q factor Electrically Injected Green Micro Cavity
Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping
AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser
Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
Photoluminescence of green InGaN/GaN MQWs grown on pre-wells*
Research on Auto-split GaN-based Vertical Structure LED
Optical properties of organic neodymium complex doped optical waveguides based on the intramolecular energy transfer effect
Photoassisted chemical smoothing of AlGaN surface after laser lift-off
A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides
Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
Influence of Photo-electron Coupling on Optical Properties of InGaN/GaN Quantum Wells
Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
Impact of Series-Connected Ferroelectric Capacitor in HfO2-Based Ferroelectric Field-Effect Transistors for Memory Application
Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect
Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices
Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides
Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes
Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect
Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering
Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors
Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides
Large Rabi splitting in InGaN quantum wells microcavity at room temperature
Theoretical optimization of inhomogeneous broadening in InGaN/GaN MQWs to polariton splitting at low temperature
Progress and challenges in p-type oxide-based thin film transistors
Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers
Polariton lasing in InGaN quantum wells at room temperature
Loss analysis in nitride deep ultraviolet planar cavity
Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination
Weighted total variation using split Bregman fast quantitative susceptibility mapping reconstruction method
Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths
Abnormal staircase-like I-V curve in InGaN quantum well solar cells
A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures
Progress and prospects of GaN-based VCSEL from near UV to green emission
Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors
Simultaneous blue and green lasing of GaN-based vertical-cavity surface-emitting lasers
Tunable InGaN quantum dot microcavity light emitters with 129nm tuning range from yellow-green to violet
Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination
Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination
Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment
Modulation characteristics of GaN-based light-emitting-diodes for visible light communication
Channel modification engineering by plasma processing in tin-oxide thin film transistor: Experimental results and first-principles calculation
Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells
自分裂GaN基垂直结构LED研究
光子学报,1004-4213,2020-12-01.光电耦合对InGaN/GaN量子阱光学性能的影响
发光学报,1000-7032,2020-01-15.垂直结构GaN基LED用Ni / Ag反射镜电极
半导体技术,1003-353X,2017.