Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs/GaSb Type-II Quantum Wells

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Self-Powered High-Detectivity Lateral MoS2 Schottky Photodetectors for Near-Infrared Operation

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding