Lithium titanate synaptic device imitating lithium-ion battery structure

Performance enhancement of Ge/Si avalanche photodetector by specific sidewall passivation using remote oxygen plasma treatment

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation

Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Evolutionary mechanism and frequency response of graphite electrode at extreme temperatures

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Enhancing conductivity of Si anode enabled by selecting Si particle size for interface stabilized all-solid-state batteries

Resistive switching properties in polycrystalline LiNbO₃ thin films

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

P-i-n photodetector with active GePb layer grown by sputtering epitaxy

Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

An all-electrochem-active silicon anode enabled by spontaneous Li-Si alloying for ultra-high performance solid-state batteries

Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Insights into the Enhanced Interfacial Stability Enabled by Electronic Conductor Layers in Solid-State Li Batteries

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

Blood-brain barrier (BBB)-on-a-chip: a promising breakthrough in brain disease research

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Dual/Multi-Responsive Fluorogenic Probes for Multiple Analytes in Mitochondria: From Design to Applications

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs/GaSb Type-II Quantum Wells

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Self-Powered High-Detectivity Lateral MoS2 Schottky Photodetectors for Near-Infrared Operation

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

Observation of trap-related phenomena in electrical performance of back-gated MoS(2)field-effect transistors

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Research progress of technologies for germanium near-infrared photodetectors

High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)(3) and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)(3) modification

Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Any-polar resistive switching behavior in LATP films

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 mu m

Schottky barrier height modulation effect on n-Ge with TaN contact

Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley

Universal absorption of two-dimensional materials within k . p method

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection

Low resistivity Ta textured film formed on TaN

Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

Crystallization Kinetics of Selenium Nanocrystalline Film on Silicon (100) Substrate Produced by Rapid Thermal-annealing

Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2blocking layer

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors

Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

Impacts of ITO interlayer thickness on metal/n-Ge contacts

Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

Innovative Ge–SiO2bonding based on an intermediate ultra-thin silicon layer

Impacts of excimer laser annealing on Ge epilayer on Si

Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

Surface Passivation of Silicon Using HfO2Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Impact of nitrogen plasma passivation on the Al/n-Ge contact

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics

An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane

High (111) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

Influence of order degree of amorphous germanium on metal induced crystallization

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

Ohmic contact to n-type ge with compositional W nitride

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Transformations and reductions of gamma-octamolybdates with their monomeric and dimeric amino polycarboxylates

Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes

Ohmic contact to n-type Ge with compositional Ti nitride

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n(+)/p Diode Achieved by Implantation and Excimer Laser Annealing

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Influence of the hydrogen implantation power density on ion cutting of Ge

Properties and mechanism analysis of metal/Ge ohmic contact

Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge 0.27 epilayer

Texture evolution and grain competition in NiGe Film on Ge(001)

Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission

Influence of implantation damages and intrinsic dislocations on phosphorus diffusion in ge

Wet thermal annealing effect on TaN/HfO2/Ge metal - Oxide - Semiconductor capacitors with and without a GeO2 passivation layer

Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method

Research on the evolution & innovation for modular product family

Modulation of schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness

Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Disassembly analysis based on entropy and extension theory

Using FAHP and D-S theory for evaluating the state of the product family

Identification of Cabin Noise Source based on Wavelet Transform

Method to aid Modules Innovation by patent knowledge

Product innovation and evaluation based on TOC and TRIZ

Improvement on performance of Si-based Ge PIN photodetector with Al/TaN electrode for n-type Ge contact

A study of the schottky-barrier height of nickel germanosilicide contacts formed on Si1-xGex epilayer on Si substrates

Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique

Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity

Simulation of ride comfort of tracked vehicle based on road random excitation

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

Thermal stability of nickel germanide formed on tensile-strained ge epilayer on SI substrate

Preparation for Si/Se/Si sandwich structure on Si (001)