学者信息
已发表成果：
WOK 论文 37 篇;中文核心 2 篇;其它论文 2 篇;
-
Coordination multi-band absorbers with patterned irrelevant graphene patches based on multi-layer film structures
Journal of Physics D: Applied Physics,0022-3727,2021-12-16.
Bao, Zhiyu; Wang, Jicheng; Hu, Zheng-Da; Chen, Yifan; Zhang, Chengliang; Zhang, Feng
WOS:000701261800001 EI:20214111013730 10.1088/1361-6463/ac22d6
收录情况：SCIE、EI -
High performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors
Journal of Materials Chemistry C,2050-7534,2021-11-21.
Yue, Qian; Gao, Wei; Wen, Peiting; Chen, Quan; Yang, Mengmeng; Zheng, Zhaoqiang; Luo, Dongxiang; Hu...
WOS:000713285100001 EI:20214711197364 10.1039/d1tc03884b
收录情况：SCIE、EI -
2D WS2 Based Asymmetric Schottky Photodetector with High Performance
ADVANCED ELECTRONIC MATERIALS,2199-160X,2021-07.
Gao, Wei; Zhang, Shuai; Zhang, Feng; Wen, Peiting; Zhang, Li; Sun, Yiming; Chen, Hongyu; Zheng, Zha...
WOS:000595431300001 10.1002/aelm.202000964
收录情况：SCIE -
Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays
IEEE Electron Device Letters,0741-3106,2021.
Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
WOS:000736740500020 EI:20215011321531 10.1109/LED.2021.3132415
收录情况：SCIE、EI -
Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
Yang, Fei; Tian, Lixin; Shen, Zhanwei; Yan, Guoguo; Liu, Xingfang; Zhao, Wanshun; Wang, Lei; Sun, G...
WOS:000812299400015 EI:20220811682337 10.1109/WiPDAAsia51810.2021.9656100
收录情况：EI、CPCI-S -
The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
Zhang, Ruijun; Hong, Rongdun; Cai, Jiafa; Chen, Xiaping; Lin, Dingqu; Zhang, Mingkun; Wu, Shaoxiong...
WOS:000812299400054 EI:20220811682302 10.1109/WiPDAAsia51810.2021.9656062
收录情况：EI、CPCI-S -
A Survey on Modeling of SiC IGBT
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
Wu, Yuwei; Wang, Laili; Wang, Jianpeng; Zhang, Feng
WOS:000812299400047 EI:20220811682331 10.1109/WiPDAAsia51810.2021.9656094
收录情况：EI、CPCI-S