Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Li2S-Based Composite Cathode with in Situ-Generated Li3PS4 Electrolyte on Li2S for Advanced All-Solid-State Lithium-Sulfur Batteries

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Insights into the Enhanced Interfacial Stability Enabled by Electronic Conductor Layers in Solid-State Li Batteries

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

High-Performance N-MoSe₂/P-GeSn/N-Ge van der Waals Heterojunction Phototransistor for Short-Wave Infrared Photodetection