Comparative study of sodium and potassium compounds as promoters for growth of monolayer MoS₂ with high crystal quality on SiO₂/Si substrate

Lithium titanate synaptic device imitating lithium-ion battery structure

Performance enhancement of Ge/Si avalanche photodetector by specific sidewall passivation using remote oxygen plasma treatment

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

High-quality Ge1?xSnx (x = 0-0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors

Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation

Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Resistive switching properties in polycrystalline LiNbO₃ thin films

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

P-i-n photodetector with active GePb layer grown by sputtering epitaxy

Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

How to Stabilize the Current of Efficient Inverted Flexible Perovskite Solar Cells at the Maximum Power Point

Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy

Schottky Barrier Height Modification of Graphene/Ge by Al₂O₃ Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis

Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Li2S-Based Composite Cathode with in Situ-Generated Li3PS4 Electrolyte on Li2S for Advanced All-Solid-State Lithium-Sulfur Batteries

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Insights into the Enhanced Interfacial Stability Enabled by Electronic Conductor Layers in Solid-State Li Batteries

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

High-Performance N-MoSe₂/P-GeSn/N-Ge van der Waals Heterojunction Phototransistor for Short-Wave Infrared Photodetection

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

Dipole-like and quadrupole-like reflection modes for Ag nanocube arrays on dielectric substrates

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Ultrastable near-infrared perovskite light-emitting diodes

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Identification of Two-Dimensional Material Nanosheets Based on Deep Neural Network and Hyperspectral Microscopy Images

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs/GaSb Type-II Quantum Wells

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Self-Powered High-Detectivity Lateral MoS2 Schottky Photodetectors for Near-Infrared Operation

The effect of vacancy defects on the conductive properties of SiGe

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

Observation of trap-related phenomena in electrical performance of back-gated MoS(2)field-effect transistors

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

An Efficient Trap Passivator for Perovskite Solar Cells: Poly(propylene glycol) bis(2-aminopropyl ether)

Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Localized surface plasmon enhanced Ga2O3 solar blind photodetectors

Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film

Research progress of technologies for germanium near-infrared photodetectors

High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain

Reducing Open-Circuit Voltage Deficit in Perovskite Solar Cells via Surface Passivation with Phenylhydroxylammonium Halide Salts

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)(3) and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)(3) modification

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique

Double-shelled microscale porous Si anodes for stable lithium-ion batteries

Incorporating CsF into the PbI2 Film for Stable Mixed Cation-Halide Perovskite Solar Cells

Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method

Design and research of Ge/Si avalanche photodiode with a specific lateral carrier collection structure

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 mu m

In situ investigation of light soaking in organolead halide perovskite films

Schottky barrier height modulation effect on n-Ge with TaN contact

Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition

Scalable Engineering of Bulk Porous Si Anodes for High Initial Efficiency and High-Areal-Capacity Lithium-Ion Batteries

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Interfacial Passivation for Perovskite Solar Cells: The Effects of the Functional Group in Phenethylammonium Iodide

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley

Universal absorption of two-dimensional materials within k . p method

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection

Low resistivity Ta textured film formed on TaN

Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

Crystallization Kinetics of Selenium Nanocrystalline Film on Silicon (100) Substrate Produced by Rapid Thermal-annealing

Capitalization of interfacial AlON interactions to achieve stable binder-free porous silicon/carbon anodes

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors

Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions

Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Ge n+/p shallow junctions for light emission and detection applications

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector

Impacts of ITO interlayer thickness on metal/n-Ge contacts

Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (1122) GaN

Simulation of spontaneous emission spectrum of degenerate Ge under large injection level

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode

Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

Innovative Ge–SiO2bonding based on an intermediate ultra-thin silicon layer

Impacts of excimer laser annealing on Ge epilayer on Si

Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Impact of nitrogen plasma passivation on the Al/n-Ge contact

Properties of n-Ge epilayer on Si substrate with in-situ doping technology

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition

Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics

An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

NiSix/a-si Nanowires with Interfacial a-Ge as Anodes for High-Rate Lithium-Ion Batteries

Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane

Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode

The study of characteristics in flat-tube radiator based on multiple rows

High (111) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

Selective area growth of Ge film on Si

High-performance Ge p-i-n photodetector on Si substrate

Influence of order degree of amorphous germanium on metal induced crystallization

A peanut shell inspired scalable synthesis of three-dimensional carbon coated porous silicon particles as an anode for lithium-ion batteries

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes

Ohmic contact to n-type ge with compositional W nitride

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing

The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness

Phosphorus diffusion in germanium following implantation and excimer laser annealing

Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Enhanced reversible lithium storage in germanium nano-island coated 3D hexagonal bottle-like Si nanorod arrays

Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height

Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes

Ohmic contact to n-type Ge with compositional Ti nitride

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n(+)/p Diode Achieved by Implantation and Excimer Laser Annealing

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Influence of the hydrogen implantation power density on ion cutting of Ge

Charge storage characteristics of au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer

Properties and mechanism analysis of metal/Ge ohmic contact

The impact of polishing on germanium-on-insulator substrates

Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate

Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge 0.27 epilayer

Texture evolution and grain competition in NiGe Film on Ge(001)

In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition

Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission

Influence of implantation damages and intrinsic dislocations on phosphorus diffusion in ge

Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy

Charge trapping properties of Au nanocrystals with various sizes for non-volatile memory applications

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Wet thermal annealing effect on TaN/HfO2/Ge metal - Oxide - Semiconductor capacitors with and without a GeO2 passivation layer

Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method

Detection and analysis of residual strain of epitaxial Ge films on Si substrates

Design and experiment of Si-based Ge/SiGe type-I quantum well structure

Modulation of schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness

Enhanced thermal stability of Au@Pt nanoparticles by tuning shell thickness: Insights from atomistic simulations

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

The optical property of tensile-strained n-type doped Ge

Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate

Effect of excimer laser annealing on the silicon nanocrystals embedded in silicon-rich silicon nitride film

Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique

Novel photoluminescence from porous SiGe/Si multilayer structure

Epitaxial Growth of Germanium on Silicon for Light Emitters

Improvement on performance of Si-based Ge PIN photodetector with Al/TaN electrode for n-type Ge contact

Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion

A study of the schottky-barrier height of nickel germanosilicide contacts formed on Si1-xGex epilayer on Si substrates

Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity

Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template

Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Formation and optical properties of nanocrystalline selenium on Si substrate

Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique

Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Ge thin films on Si substrate and thermal annealing effect on their properties

Asymmetric light reflectance effect in AAO on glass

Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density

Structural and optical properties of porous SiGe/Si multilayer films

Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

Fabrication of Ge PIN photodiodes on silicon-on-insulator substrates under normal incidence

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

Thermal stability of nickel germanide formed on tensile-strained ge epilayer on SI substrate

GaN LED/metals/Si structure fabricated by bonding and laser-lift off

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates

Preparation for Si/Se/Si sandwich structure on Si (001)

Ge incorporation in HfO2 dielectric deposited on Ge substrate during dry/wet thermal annealing

Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

The shape transformation of Si patterned-substrate in thermal decomposition of native oxide during vacuum annealing

Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

Fabrication and characteristics of Si-based Ge waveguide photodetectors

Room temperature photoluminescence of tensile-strained Ge/ Si0.13 Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

Strain relaxation in SiGe layer during wet oxidation process

Strain relaxation in Ultrathin SGOI substrates fabricated by multistep ge condensation method

GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

Promoting strain relaxation of Si0.72Ge0.28 film on Si (1 0 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD

Effect of Ge content on DC characteristics of SiGe HBT

Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing

Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Research and fabrication of silicon based metal-semiconductor-metal photodetector with U-shape trench interdigitated electrodes

Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition

Waveguide simulation of a THz Si/SiGe quantum cascade laser

Characteristics of Si-based metal-germanium-metal photodetectors

Study on growth and morphology properties of Ge/Si(100) quantum dots

Energy band design for p-type tensile strained Si/SiGe quantum well infrared photodetectors

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient

Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy

Metal-semiconductor-metal Ge photodetectors on SOI substrates for near infrared wavelength operation

Preparation and characterization of a SiGe buffer layer by dry oxidation

Energy band design for Si/SiGe quantum cascade laser

Investigation of passivation of porous silicon at room temperature

Preparation of two-dimensional patterned silicon substrate by holographic lithography

Low-temperature wafer-to-wafer bonding using intermediate metals

Epitaxial growth and luminescence characterization of Si-based double heterostructures light-emitting diodes with iron disilicide active region

Design and simulation of Si-based resonant-cavity-enhanced waveguide photodetectors

Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes

Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region

Energy band design for a terahertz Si/SiGe quantum cascade laser

Improvement of luminescence from β-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer

Influence of annealing temperature on luminescence of β-FeSi2 particles embedded in silicon

Resonant cavity-enhanced Si photodetectors with distributed Bragg reflector

Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon

Measurements of carrier confinement at β-FeSi2-Si heterojunction by electroluminescence

Growth and characterization of Si-Based light-emitting diode with β-FeSi2 active region by molecular beam epitaxy