Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Complementary bipolar resistive switching behavior in lithium titanate memory device

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

High-Performance N-MoSe₂/P-GeSn/N-Ge van der Waals Heterojunction Phototransistor for Short-Wave Infrared Photodetection

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering