Comparative study of sodium and potassium compounds as promoters for growth of monolayer MoS₂ with high crystal quality on SiO₂/Si substrate

Lithium titanate synaptic device imitating lithium-ion battery structure

Performance enhancement of Ge/Si avalanche photodetector by specific sidewall passivation using remote oxygen plasma treatment

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

High-quality Ge1?xSnx (x = 0-0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors

Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation

Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Resistive switching properties in polycrystalline LiNbO₃ thin films

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

P-i-n photodetector with active GePb layer grown by sputtering epitaxy

Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Schottky Barrier Height Modification of Graphene/Ge by Al₂O₃ Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

Quasi-2D Phonon Transport in Diamond Nanosheet

Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Complementary bipolar resistive switching behavior in lithium titanate memory device

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

High-Performance N-MoSe₂/P-GeSn/N-Ge van der Waals Heterojunction Phototransistor for Short-Wave Infrared Photodetection

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries