已发表成果:
WOK 论文 43 篇;中文核心 2 篇;
Comparative study of sodium and potassium compounds as promoters for growth of monolayer MoS<sub>2</sub> with high crystal quality on SiO<sub>2</sub>/Si substrate
Lithium titanate synaptic device imitating lithium-ion battery structure
Performance enhancement of Ge/Si avalanche photodetector by specific sidewall passivation using remote oxygen plasma treatment
Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction
High-quality Ge1?xSnx (x = 0-0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors
Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation
Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications
Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector
Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO<sub>2</sub>/Si substrates
Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection
Resistive switching properties in polycrystalline LiNbO<sub>3</sub> thin films
Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging
P-i-n photodetector with active GePb layer grown by sputtering epitaxy
Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection
InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy
Schottky Barrier Height Modification of Graphene/Ge by Al<sub>2</sub>O<sub>3</sub> Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors
Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding
Quasi-2D Phonon Transport in Diamond Nanosheet
2维材料/Ⅳ族体材料异质结多光谱光晶体管
激光技术,1001-3806,2024-05-18.