张荣 (Rong Zhang)
2023年当选中国科学院院士。 入选教育部“长江学者奖励计划”特聘教授、国家杰出青年科学基金、国家自然科学基金创新群体、科技部重点领域创新团队。曾获国家技术发明二等奖、国家自然科学二等奖、国家教学成果二等奖和国家技术发明三等奖各1项、何梁何利科学与技术进步奖、省部级科技一等奖3项。
获国家自然科学奖二等奖和技术发明三等奖,教育部自然科学一等奖和技术发明一等奖,及其它部省级成果奖5项。
任国家“863计划”光电子材料及器件主题/半导体照明工程重大项目/重点科技专项专家组成员/副组长,国家自然科学基金半导体学科专家评审组成员,同时还担任光电材料与技术、集成光电子学等国家重点实验室学术委员会委员;长期任氮化物领域最重要系列国际会议IWN和ICNS国际顾问/程序/组织委员会委员。
《科学通报》、《半导体学报》等多个学术刊物和半导体光电子领域学术丛书编委。
已发表成果:
WOK 论文 371 篇;中文核心 9 篇;其它论文 14 篇;专利发明 98 个;
Modulation of oxygen vacancies in InSnZnO thin films and applications for high-speed metal-semiconductor-metal ultraviolet photodetectors
Anisotropic phonon dynamics in Dirac semimetal PtTe<sub>2</sub> thin films enabled by helicity-dependent ultrafast light excitation
Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection
High-efficient spin injection in GaN through a lattice-matched tunnel layer
Investigation of Ohmic contact to plasma-etched n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N by surface treatment
Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis
Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias
Observation of giant non-reciprocal charge transport from quantum Hall states in a topological insulator
Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO<sub>3</sub>
Light-induced giant enhancement of nonreciprocal transport at KTaO<sub>3</sub>-based interfaces
High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact
Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe<sub>2</sub> thin films
Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces
Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures
Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications
Ga<sub>2</sub>O<sub>3</sub>/GaN-Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection
Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis
创新赋能 聚力开“局” 以高质量基础研究夯实科技强国建设根基
中国科学基金,1000-8217,2024-05-06.统筹推进教育科技人才体制机制一体改革 提升国家创新体系整体效能的制胜方略
人民论坛,1004-3381,2024-11-29.促进科技创新和产业创新深度融合
国家治理,2095-8935,2024-11-03.六边形micro-LED台面制备及光学特性研究
光电子技术,1005-488X,2024-09-30.