Transformation from MoO3 into MoS2: Experimental study on phase transition and energy band modulation

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO₂/Si substrates

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

Conductance modification of molybdenum oxide thin films through oxygen-vacancy engineering for visible-blind ultraviolet photodetection

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

PEO-Li₂₁Si₅ as a pre-lithiation and structural protection layer for lithium-ion batteries

Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy

An all-electrochem-active silicon anode enabled by spontaneous Li-Si alloying for ultra-high performance solid-state batteries

Silicon Nanowire Array Weaved by Carbon Chains for Stretchable Lithium-Ion Battery Anode

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

Manipulating charge-transfer kinetics and a flow-domain LiF-rich interphase to enable high-performance microsized silicon-silver-carbon composite anodes for solid-state batteries

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Complementary bipolar resistive switching behavior in lithium titanate memory device

Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Enabling structural and interfacial stability of 5 V spinel LiNi0.5Mn1.5O4 cathode by a coherent interface

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Insights into the Enhanced Interfacial Stability Enabled by Electronic Conductor Layers in Solid-State Li Batteries

Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

Visible to Short-Wave Infrared Broadband p-WSe₂/n-Ge Heterojunction Phototransistor with an Annular Shallow-Trench Schottky Barrier Collector

Manipulating charge-transfer kinetics and a flow-domain LiF-rich interphase to enable high-performance microsized silicon-silver-carbon composite anodes for solid-state batteries

Monothetic and conductive network and mechanical stress releasing layer on micron-silicon anode enabling high-energy solid-state battery

Low-cost self-powered shortwave infrared photodetectors with GeSn/Ge multiple quantum wells grown by magnetron sputtering

Spatially modulated femtosecond laser direct ablation-based preparation of ultra-flexible multifunctional copper mesh electrodes and its application

Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Interfacial nitrogen engineering of robust silicon/MXene anode toward high energy solid-state lithium-ion batteries

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer

Liquid-phase sintering enabling mixed ionic-electronic interphases and free-standing composite cathode architecture toward high energy solid-state battery

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation

Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer

All solid thick oxide cathodes based on low temperature sintering for high energy solid batteries

Mask-free patterning of Cu mesh as smart windows by spatially modulated nanosecond laser pulses

Induction of planar Li growth with designed interphases for dendrite-free Li metal anodes

Self-Powered High-Detectivity Lateral MoS2 Schottky Photodetectors for Near-Infrared Operation

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Bulk boron doping and surface carbon coating enabling fast-charging and stable Si anodes: from thin film to thick Si electrodes

Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

On the Interface Design of Si and Multilayer Graphene for a High-Performance Li-Ion Battery Anode

Observation of trap-related phenomena in electrical performance of back-gated MoS(2)field-effect transistors

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

A review: wafer bonding of Si-based semiconductors

Low temperature growth of graphitic carbon on porous silicon for high-capacity lithium energy storage

Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film

Research progress of technologies for germanium near-infrared photodetectors

High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method

High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain

Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)(3) and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)(3) modification

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique

Double-shelled microscale porous Si anodes for stable lithium-ion batteries

Any-polar resistive switching behavior in LATP films

Design and research of Ge/Si avalanche photodiode with a specific lateral carrier collection structure

High Performance Germanium n+/p Shallow Junction for nano-Scaled n-MOSFET

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 mu m

Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition

Scalable Engineering of Bulk Porous Si Anodes for High Initial Efficiency and High-Areal-Capacity Lithium-Ion Batteries

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Universal absorption of two-dimensional materials within k . p method

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection

Self-assemble SiGe island structures formed by nanosecond laser irradiation on SiGe virtual film

Low resistivity Ta textured film formed on TaN

Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

Crystallization Kinetics of Selenium Nanocrystalline Film on Silicon (100) Substrate Produced by Rapid Thermal-annealing

Capitalization of interfacial AlON interactions to achieve stable binder-free porous silicon/carbon anodes

Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors

High-quality strain-relaxed Si0.72Ge0.28layers grown by MBE-UHV/CVD combined deposition chamber

Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Ge n+/p shallow junctions for light emission and detection applications

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

Impacts of ITO interlayer thickness on metal/n-Ge contacts

Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions

Effect of chromatic aberration on performance of concentrated multi-junction solar cells and their optimization

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode

Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

An improved genetic algorithm for crystal structure prediction

Innovative Ge–SiO2bonding based on an intermediate ultra-thin silicon layer

Impacts of excimer laser annealing on Ge epilayer on Si

Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

Surface Passivation of Silicon Using HfO2Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Impact of nitrogen plasma passivation on the Al/n-Ge contact

Optimization of the current matching the concentrated multi-junction solar cells under the outdoor spectrum

Time-resolved analysis of thickness-dependent dewetting and ablation of silver films upon nanosecond laser irradiation

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices

Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

NiSix/a-si Nanowires with Interfacial a-Ge as Anodes for High-Rate Lithium-Ion Batteries

Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane

Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode

High (111) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

Selective area growth of Ge film on Si

Influence of order degree of amorphous germanium on metal induced crystallization

Investigation of porous silicon/carbon composite as anodes for lithium ion batteries

A peanut shell inspired scalable synthesis of three-dimensional carbon coated porous silicon particles as an anode for lithium-ion batteries

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes

Ohmic contact to n-type ge with compositional W nitride

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing

Phosphorus diffusion in germanium following implantation and excimer laser annealing

Non-homogeneous SiGe-on-insulator formed by germanium condensation process

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height

Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes

Ohmic contact to n-type Ge with compositional Ti nitride

Analysis on the ageing mechanism of GaN-based blue and green LED by electrical stresses

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n(+)/p Diode Achieved by Implantation and Excimer Laser Annealing

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Influence of the hydrogen implantation power density on ion cutting of Ge

Properties and mechanism analysis of metal/Ge ohmic contact

The impact of polishing on germanium-on-insulator substrates

Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate

Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge 0.27 epilayer

Texture evolution and grain competition in NiGe Film on Ge(001)

In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition

Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission

Influence of implantation damages and intrinsic dislocations on phosphorus diffusion in ge

Wet thermal annealing effect on TaN/HfO2/Ge metal - Oxide - Semiconductor capacitors with and without a GeO2 passivation layer

Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method

Modulation of schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness

Design and experiment of Si-based Ge/SiGe type-I quantum well structure

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

The optical property of tensile-strained n-type doped Ge

Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate

Effect of excimer laser annealing on the silicon nanocrystals embedded in silicon-rich silicon nitride film

Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique

Novel photoluminescence from porous SiGe/Si multilayer structure

Epitaxial Growth of Germanium on Silicon for Light Emitters

Improvement on performance of Si-based Ge PIN photodetector with Al/TaN electrode for n-type Ge contact

A study of the schottky-barrier height of nickel germanosilicide contacts formed on Si1-xGex epilayer on Si substrates

Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity

Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template

Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Formation and optical properties of nanocrystalline selenium on Si substrate

Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes

Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Ge thin films on Si substrate and thermal annealing effect on their properties

Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density

Structural and optical properties of porous SiGe/Si multilayer films

Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

Thermal stability of nickel germanide formed on tensile-strained ge epilayer on SI substrate

GaN LED/metals/Si structure fabricated by bonding and laser-lift off

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates

Preparation for Si/Se/Si sandwich structure on Si (001)

Ge incorporation in HfO2 dielectric deposited on Ge substrate during dry/wet thermal annealing

Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

The shape transformation of Si patterned-substrate in thermal decomposition of native oxide during vacuum annealing

Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

Fabrication and characteristics of Si-based Ge waveguide photodetectors

Room temperature photoluminescence of tensile-strained Ge/ Si0.13 Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

Investigation of bonded InP/GaAs interface by XPS

Low-temperature direct wafer bonding of GaAs/InP

Strain relaxation in SiGe layer during wet oxidation process

Strain relaxation in Ultrathin SGOI substrates fabricated by multistep ge condensation method

GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

Promoting strain relaxation of Si0.72Ge0.28 film on Si (1 0 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD

Effect of Ge content on DC characteristics of SiGe HBT

Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing

Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Properties of silicon nitride film and its application to open-tube zinc diffusion

Research and fabrication of silicon based metal-semiconductor-metal photodetector with U-shape trench interdigitated electrodes

Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition

Characteristics of Si-based metal-germanium-metal photodetectors

Waveguide simulation of a THz Si/SiGe quantum cascade laser

Study on growth and morphology properties of Ge/Si(100) quantum dots

Energy band design for p-type tensile strained Si/SiGe quantum well infrared photodetectors

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

Oxidation behavior of strained SiGe layer on silicon substrate in both dry and wet ambient

Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy

Metal-semiconductor-metal Ge photodetectors on SOI substrates for near infrared wavelength operation

Preparation and characterization of a SiGe buffer layer by dry oxidation

Energy band design for Si/SiGe quantum cascade laser

Investigation of passivation of porous silicon at room temperature

Preparation of two-dimensional patterned silicon substrate by holographic lithography

Low-temperature wafer-to-wafer bonding using intermediate metals

Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes

Energy band design for a terahertz Si/SiGe quantum cascade laser

Improvement of luminescence from β-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer

Investigation of an effective passivation method for porous silicon with the aid of ozone molecules

Resonant cavity-enhanced Si photodetectors with distributed Bragg reflector

Influence of annealing temperature on luminescence of β-FeSi2 particles embedded in silicon

Study on the photoluminescence spectroscopy of silicon nanocrystal formed by pulse-laser deposition

New method of nanosilicon preparation by pulsed-laser deposition

Normal distribution of confinement energy from a photoluminescence line shape analysis in oxidized porous silicon

New method for low-temperature direct wafer bonding of InP/GaAs

Effect on photoluminescence intensity of porous silicon processing by a wet oxidized technology

Interface of Si/Si directly wafer bonding

Characterizations and luminescence properties of annealed porous silicon films

Characterization of InGaN and InGaN/GaN quantum wells grown by LP-MOCVD

Photoluminescence properties of self-assembled and nano-sized silicon quantum dots

Optimum design of the well number for InGaAsP/InP SCH QW laser and its fabrication

Transport properties of Quasi-two-dimensional nature-superlattice material Mo4O11

GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE