学者信息

傅德颐

物理科学与技术学院

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已发表成果:

WOK 论文 11 篇;

  • Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC

    NANOTECHNOLOGY,0957-4484,2024-07-01.
    Zhu, Xiaogang; Shen, Zhanwei; Wang, Z. J.; Liu, Zhengran; Miao, Yuyang; Yue, Shizhong; Fu, Zhao; Li...
    WOS:001206590100001   EI:20241715981578   10.1088/1361-6528/ad3a6e
    收录情况:SCIE、EI
  • High-efficient spin injection in GaN through a lattice-matched tunnel layer

    APPLIED PHYSICS LETTERS,0003-6951,2024-06-10.
    Chen, Mingyu; Huang, Shiming; Jiang, Wei; Wu, Qipeng; Tan, Peng; Zhang, Chenhao; Fu, Deyi; Li, Xu; ...
    WOS:001248285000001   EI:20242516266042   10.1063/5.0194999
    收录情况:SCIE、EI
  • High-Performance SiC/Graphene UV-Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

    ADVANCED OPTICAL MATERIALS,2195-1071,2024-05-10.
    Zhang, Zeyang; Sun, Cunzhi; Zhu, Baihong; Chen, Jiadong; Fu, Zhao; Li, Zihao; Wu, Shaoxiong; Zhang,...
    WOS:001217341700001   EI:20242016074801   10.1002/adom.202400469
    收录情况:SCIE、EI
  • X-ray magnetic circular dichroism and anomalous Hall effect in proton-doped spinel NiCo2O4 thin films

    Physical Review B,2469-9950,2023-06-15.
    Wu, M.; Li, Y.; Luo, H.; Liao, X.; Liu, W.; Huang, X.; Shi, J.; Zhang, K. H. L.; Deng, T.; Du, Y.; ...
    WOS:001055094400004   EI:20232714331275   10.1103/PhysRevB.107.245128
    收录情况:SCIE、EI
  • Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

    Chinese Physics B,1674-1056,2023-05-01.
    Zhang, Ruijun; Hong, Rongdun; Han, Jingrui; Ting, Hungkit; Li, Xiguang; Cai, Jiafa; Chen, Xiaping; ...
    WOS:000992220100001   EI:20232214167554   10.1088/1674-1056/ac89db
    收录情况:SCIE、EI
  • Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation

    Applied Physics Letters,0003-6951,2023-04-17.
    Zhu, Baihong; Sun, Cunzhi; Chen, Jiadong; Li, Zihao; Huang, Shiming; Wu, Shaoxiong; Lin, Dingqu; Li...
    WOS:000973323100004   EI:20231814029082   10.1063/5.0145334
    收录情况:SCIE、EI
  • A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

    Journal of Semiconductors,1674-4926,2023-02.
    Wang, Xiaojie (1); Shen, Zhanwei (2); Zhang, Guoliang (1); Miao, Yuyang (1); Li, Tiange (1); Zhu, X...
    EI:20231213790581   10.1088/1674-4926/43/12/122802
    收录情况:EI
  • High-Speed and Responsivity 4H-SiC 8 x 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure

    IEEE Transactions on Electron Devices,0018-9383,2023.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:001025576700001   EI:20232714340607   10.1109/TED.2023.3286379
    收录情况:SCIE、EI
  • Enhanced Valley Splitting in Monolayer WSe2 by Phase Engineering

    ACS Nano,1936-0851,2021.
    Liu, Haiyang; Fu, Deyi; Li, Xu; Han, Junbo; Chen, Xiaodie; Wu, Xuefeng; Sun, Baofan; Tang, Weiqing;...
    WOS:000656994100028   EI:20212110410243   10.1021/acsnano.0c08305
    收录情况:SCIE、EI
  • Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

    ACS Applied Materials and Interfaces,1944-8244,2021.
    Wang, Xuewen; Wang, Bolun; Wu, Yonghuang; Wang, Enze; Luo, Hao; Sun, Yufei; Fu, Deyi; Sun, Yinghui;...
    WOS:000662086600054   EI:20212610551903   10.1021/acsami.1c00725
    收录情况:SCIE、EI
  • Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays

    IEEE Electron Device Letters,0741-3106,2021.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:000736740500020   EI:20215011321531   10.1109/LED.2021.3132415
    收录情况:SCIE、EI