学者信息

Synthesis and characterization of metallapentalenoxazetes by the [2+2] cycloaddition of metallapentalynes with nitrosoarenes

CHEMICAL COMMUNICATIONS,1359-7345,2019-06-04.
Deng, ZH; Zhu, CQ; Hua, YH; He, GM; Guo, Y; Lu, RQ; Cao, XY; Chen, JX; Xia, HP
WOS:000469258900016 10.1039/c9cc02594d
收录情况：SCIE

Adsorption of Si on Ag(0 0 1) from ab initio study

Surface Science,0039-6028,2009-07-01.
He, Guo-min(1)
WOS:000267083500008 EI:20092112092210 10.1016/j.susc.2009.03.023
收录情况：SCIE、EI

First-principles study of the structure of methanethiolate on Ag(111)

Physical Review B,1098-0121,2006-12.
He, G. M.
WOS:000243195800116 10.1103/PhysRevB.74.245421
收录情况：SCIE

Atomic structure of Si nanowires on Ag(110): A density-functional theory study

Physical Review B,1098-0121,2006-01.
He, G. M.
WOS:000235009500099 10.1103/PhysRevB.73.035311
收录情况：SCIE

Ge adsorption on Pt(100) and Pt(111) surfaces: A density-functional study

Physical Review B,1098-0121,2005-05.
He, G. M.
WOS:000230244100104 10.1103/PhysRevB.71.195409
收录情况：SCIE

Adsorption of Si on Cu(100) and (111) surfaces

Chinese Physics Letters,0256-307X,2004-11.
He, Guo-Min (1)
EI:20220711665112 10.1088/0256-307X/21/11/047
收录情况：EI

Adsorption of Si on Cu(100) and (111) surfaces

Chinese Physics Letters,0256-307X,2004-09.
He, G. M.
WOS:000225056300047
收录情况：SCIE

Progress in the synthesis and reactivity studies of metallabenzenes

Chinese Science Bulletin,1001-6538,2004-08.
Jia, GC; Xia, HP; He, GM
WOS:000224314400001 10.1360/04wb0005
收录情况：SCIE

Si adsorption on Cu(1 1 0) surface from ab initio calculation

Surface Science,0039-6028,2004-03-20.
He, Guo-min(1); Li, Shu-ping(1); Zhou, Zicong(2)
WOS:000220271500015 EI:2004128071396 10.1016/j.susc.2004.01.053
收录情况：SCIE、EI

Design of tensile strained InGaAsP/InGaAsP MQW for 1.5 μm polarization independent semiconductor optical amplifier

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,0253-4177,2003-01.
Qiu, Weibin(1); He, Guomin(2); Dong, Jie(1); Wang, Wei(1)
EI:2003227490332
收录情况：EI

Structural and electronic properties of RuSi, RuGe and OsSi

Chinese Physics Letters,0256-307X,2001-10.
Li, SP; He, GM; Huang, MC
WOS:000171666600029
收录情况：SCIE

Structural and electronic properties of RuSi, RuGe and OsSi

Chinese Physics Letters,0256-307X,2001-10.
He, Guo-Min (1); Li, Shu-Ping (1); Huang, Mei-Chun (1)
EI:20220711661660 10.1088/0256-307X/18/10/329
收录情况：EI

Stability and electronic structures of the polar diamond/boron-nitride(001) interface

Solid State Communications,0038-1098,2001-05-11.
Guo-Min, He(1); Yong-Mei, Zheng(1); Ren-Zhi, Wang(1); Shu-Ping, Li(1)
WOS:000168631400005 EI:2001236533571 10.1016/S0038-1098(01)00098-9
收录情况：SCIE、EI

Valence subband structure and optical gain of InGaAs/InP quantum wire

Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics,1000-3819,2001-02.
He, G.M.(1); Zheng, Y.M.(1); Wang, R.Z.(1); Liu, B.L.(1)
EI:2001416684206
收录情况：EI

Average-bond-energy method used for band-offset calculation for a strained heterojunction

Journal of Physics Condensed Matter,0953-8984,2000-09-04.
Li, Shu-Ping(2); Wang, Ren-Zhi(1,2); Zheng, Yong-Mei(1,2); Cai, Shu-Hui(2); He, Guo-Min(2)
WOS:000089333000015 EI:2000465355879 10.1088/0953-8984/12/35/311
收录情况：SCIE、EI

Appllications of average-bond-energy method in strained-layer heterojunction band offset

Wuli Xuebao/Acta Physica Sinica,1000-3290,2000-08.
Li, Shu-Ping; Wang, Ren-Zhi; Zheng, Yong-Mei; Cai, Shu-Hui; He, Guo-Min
WOS:000088685000007 EI:2004057952452
收录情况：SCIE、EI

Application of average-bond-energy method in strained-layer heterojunction band offset

Wuli Xuebao/Acta Physica Sinica,1000-3290,2000-08.
Li, Shuping; Wang, Renzhi; Zheng, Yongmei; Cai, Shuhui; He, Guomin
EI:2000115398083
收录情况：EI

Syntheses and characterizations of rare earth compounds RE(HCO2)(3)(HNO2) (H2CO2) (RE = Y, Tb, Dy, Ho, Er, Yb, Tm)

Journal of Rare Earths,1002-0721,1999-03.
Zhao, J. T.; He, G. M.; Xu, Y. T.; Zeng, B. R.; Mao, S. Y.; Mi, J. X.
WOS:000079462900001
收录情况：SCIE

Electronic structure of strained-layer superlattice GaN-AlN

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics,1000-3819,1999-02.
He, Guomin(1); Wang, Renzhi(1); Zheng, Yongmei(1)
EI:2000215117664
收录情况：EI

Deformation potentials of GaN and AlN and band offsets at GaN/AlN heterojunction

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,0253-4177,1999.
He, Guomin(1); Wang, Renzhi(1); Wu, Zhengyun(1); Zheng, Yongmei(1); Cai, Shuhui(1)
EI:1999414768164
收录情况：EI

Optical absorption spectra of coupled quantum wires InAsxP1-x/InP

Physica Status Solidi B-Basic Research,0370-1972,1998-06.
He, G. M.; Wang, R. Z.; Zheng, Y. M.
WOS:000074347600030 10.1002/(SICI)1521-3951(199806)207:2<567::AID-PSSB567>3.0.CO;2-0
收录情况：SCIE

Electronic structure of InAsxP1-x/InP strained quantum wires

Chinese Physics Letters,0256-307X,1998.
He, G. M.; Li, K. H.; Wang, R. Z.; Zheng, Y. M.
WOS:000075918300018 EI:20220711662847 10.1088/0256-307X/15/8/018
收录情况：SCIE、EI

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