Efficient Perovskite-Based Near-Infrared Micro Light-Emitting Diode and Size-Effect Analysis

Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection

AlInGaN nanocrystal seeded growth of weak p-type β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

Advanced Design of a III-Nitride Light-Emitting Diode via Machine Learning

Dipole-like and quadrupole-like reflection modes for Ag nanocube arrays on dielectric substrates

Simplified numerical modeling for Fano interference-induced asymmetric light reflectance effect using equivalent medium theory

Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping

Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

High External Quantum Efficiency Green Light Emitting Diodes on Stress-Manipulated AlNO Buffer Layers

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Design and fabrication of high power InGaN blue laser diode over 8 W

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm

Electrode-Dependent Electrical Properties of Detection-Band Tunable Ultraviolet Photodetectors Based on Ga2O3/GaN Heterostructures

Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

Localized surface plasmon enhanced Ga2O3 solar blind photodetectors

Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer

Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Semipolar (112ˉ2) GaN Films Improved by in situ SiNx Pretreatment of m-Sapphire Substrate Surface

Fabrication of High-Voltage Flip Chip Deep Ultraviolet Light-Emitting Diodes Using an Inclined Sidewalls Structure

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (11(2)over-bar2) GaN templates and their correlations

Characteristics of InN epilayers grown with H2-assistance

Abnormal Radiative Interband Transitions in High-Al-Content AIGaN Quantum Wells Induced by Polarized Orbitals

Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs

Emission mechanism of high Al-content AlGaN multiple quantum wells

Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg-Si codoping pair by MOCVD

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

Ethanol assisted formation of aligned MWCNT bundles on nanostructured ZnO surface

Band engineering of GaN/AlN quantum wells by Si dopants

Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons

High Mg effective incorporation in Al-rich AlxGa1-xN by periodic repetition of ultimate V/III ratio conditions

Defect suppression in AlN epilayer using hierarchical growth units

Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures

Ethanol induced formation of graphene fractions suspended in acetonitrile

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

Fabrication and optical properties of green emission semipolar {1011} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

Design of type-II MgxZn1-xO:N/ZnO superlattices for UV photodetector applications

Defect influence on luminescence efficiency of GaN-based LEDs