厦门大学学者库

学者信息

李俊 (Jun Li)

物理科学与技术学院

按发表年份分组
2024
2023
2022
2021
2019
按发表刊物分组
合作者

已发表成果：

WOK 论文 24 篇;中文核心 3 篇;其它论文 1 篇;

  • P-i-n photodetector with active GePb layer grown by sputtering epitaxy

    APPLIED PHYSICS EXPRESS,1882-0778,2024-04-01.
    Yu, Jiulong; Lin, Guangyang; Xia, Shilong; Huang, Wei; Yang, Tianwei; Jiao, Jinlong; Liu, Xiangquan...
    WOS:001208057900001   EI:20241815997405   10.35848/1882-0786/ad3dc1
    收录情况：SCIE、EI

  • Strain-induced topological phase transition in graphene nanoribbons

    Physical Review B,2469-9950,2024-01-15.
    Huang, Anhua; Ke, Shasha; Guan, Ji-Huan; Li, Jun; Lou, Wen -Kai
    WOS:001174183900005   EI:20240315404978   10.1103/PhysRevB.109.045408
    收录情况：SCIE、EI

  • Nonlinear Photocurrent Responses in Janus WSSe Monolayer

    CHINESE PHYSICS LETTERS,0256-307X,2023-08-01.
    Chen, Meng; Yu, Sheng-Bin; Zhang, Dong; Li, Jun
    WOS:001042574100001   EI:20233314571948   10.1088/0256-307X/40/8/087201
    收录情况：SCIE、EI

  • Graphene-Based Photonic-like Highly Integrated Programmable Electronic Devices

    JOURNAL OF PHYSICAL CHEMISTRY LETTERS,1948-7185,2022-12-22.
    Deng, Xiong; Shen, Shen; Xu, Yanli; Liu, Jiangtao; Li, Jun; Wu, Zhenhua
    WOS:000905084000001   10.1021/acs.jpclett.2c0322711636
    收录情况：SCIE

  • Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

    Nano Research,1998-0124,2022.
    Luo, Linshan; Zheng, Feng; Gao, Haowen; Lan, Chaofei; Sun, Zhefei; Huang, Wei; Han, Xiang; Zhang, Z...
    WOS:000880257500002   EI:20224613099216   10.1007/s12274-022-5136-2
    收录情况：SCIE、EI

  • Graphene-Based Photonic-like Highly Integrated Programmable Electronic Devices

    Journal of Physical Chemistry Letters,1948-7185,2022.
    Deng, Xiong; Shen, Shen; Xu, Yanli; Liu, Jiangtao; Li, Jun; Wu, Zhenhua
    WOS:000895466500001   EI:20225013255929   10.1021/acs.jpclett.2c03227
    收录情况：SCIE、EI

  • Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs/GaSb Type-II Quantum Wells

    PHYSICAL REVIEW APPLIED,2331-7019,2021-12-22.
    Li, Jun; Liu, Jiang-Tao; Wu, Zhenhua; Huang, Wei; Li, Cheng
    WOS:000735394900003   EI:20220111431912   10.1103/PhysRevApplied.16.064053
    收录情况：SCIE、EI

  • Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

    Optics Express,1094-4087,2021-01-04.
    Hong, Haiyang; Zhang, Lu; Qian, Kun; An, Yuying; Li, Cheng; Li, Jun; Chen, Songyan; Huang, Wei; Wan...
    WOS:000605304600037   EI:20210209763077   10.1364/OE.409899
    收录情况：SCIE、EI

  • Electrically pumped terahertz laser based on a topological insulator quantum dot array

    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,1674-7348,2021-01.
    Huang, YongWei; Shi, Likun; Li, Jun; Lou, WenKai; Yuan, HuiHong; Yang, Wen; Chang, Kai
    WOS:000593109400001   10.1007/s11433-020-1604-2
    收录情况：SCIE

  • Schottky barrier height modulation effect on n-Ge with TaN contact

    Materials Science in Semiconductor Processing,1369-8001,2019-03-01.
    Wang, Jianyuan (1); Huang, Wei (1); Xu, Jianfang (1); Li, Jun (1); Huang, Shihao (2); Li, Cheng (1)...
    WOS:000454537700029   EI:20184806166844   10.1016/j.mssp.2018.11.016
    收录情况：SCIE、EI

  • Suppressed Stark shift of helical edge states in topological-insulator quantum dots

    PHYSICAL REVIEW B,2469-9950,2018-12-27.
    Liu, DY; Zhang, SH; Huang, YW; Li, J; Qu, JX; Yang, W
    WOS:000454425200003   EI:20191906878402   10.1103/PhysRevB.98.245310
    收录情况：SCIE、EI

  • Physical Insights on Quantum Confinement and Carrier Mobility in Si, SiGe, Ge Gate-All-Around NSFET for 5nm Technology Node

    IEEE Journal of the Electron Devices Society,2168-6734,2018-07-20.
    Yao, Jiaxin (1); Li, Jun (2); Luo, Kun (3); Yu, Jiahan (3); Zhang, Qingzhu (3); Hou, Zhaozhao (1); ...
    WOS:000441422600002   EI:20183005606708   10.1109/JEDS.2018.2858225
    收录情况：SCIE、EI

  • Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS,1463-9076,2017-11-28.
    Wu, Zhenhua; Li, Jian; Li, Jun; Yin, Huaxiang; Liu, Yu
    WOS:000415576800036   10.1039/c7cp05675c
    收录情况：SCIE

  • Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

    APPLIED PHYSICS EXPRESS,1882-0778,2017-06.
    Yang, Yang; Wu, Zhenhua; Yang, Wen; Li, Jun; Chen, Songyan; Li, Cheng
    WOS:000401339400001   EI:20172303744579   10.7567/APEX.10.063001
    收录情况：SCIE、EI

  • Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime

    PHYSICAL REVIEW B,2469-9950,2017-01-25.
    Li, Jun; Yang, Wen; Liu, Jiang-Tao; Huang, Wei; Li, Cheng; Chen, Song-Yan
    WOS:000398368700004   10.1103/PhysRevB.95.035308
    收录情况：SCIE

  • Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition

    MATERIALS LETTERS,0167-577X,2016-04-15.
    Lu, Qihai; Huang, Rong; Lan, Xiaoling; Chi, Xiaowei; Lu, Chao; Li, Cheng; Wu, Zhiguo; Li, Jun; Han,...
    WOS:000370533300041   10.1016/j.matlet.2016.01.087
    收录情况：SCIE

  • Ohmic contact to n-type ge with compositional W nitride

    IEEE Electron Device Letters,0741-3106,2014-12-01.
    Wu, Huan Da(1); Wang, Chen(1); Wei, Jiang Bin(1); Huang, Wei(1); Li, Cheng(1); Lai, Hong Kai(1); Li...
    WOS:000345575400009   EI:20144900293580   10.1109/LED.2014.2365186
    收录情况：SCIE、EI

  • Influence of the hydrogen implantation power density on ion cutting of Ge

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,1071-1023,2013-09.
    Ruan, Yujiao(1); Lin, Wang(1); Chen, Songyan(1); Li, Cheng(1); Lai, Hongkai(1); Huang, Wei(1); Li, ...
    WOS:000327702800010   EI:20134116831209   10.1116/1.4817756
    收录情况：SCIE、EI

  • Texture evolution and grain competition in NiGe Film on Ge(001)

    Applied Physics Express,1882-0778,2013-07.
    Huang, Wei(1); Tang, Mengrao(1); Wang, Chen(1); Li, Cheng(1); Li, Jun(1); Chen, Songyan(1); Xue, Ch...
    WOS:000321699300040   EI:20133116571039   10.7567/APEX.6.075505
    收录情况：SCIE、EI

  • Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film

    Optics Express,1094-4087,2013-04-22.
    Qi, Dongfeng(1); Liu, Hanhui(1); Gao, Wei(1); Chen, Songyan(1); Li, Cheng(1); Lai, Hongkai(1); Huan...
    WOS:000318151600069   EI:20131916321287   10.1364/OE.21.009923
    收录情况：SCIE、EI

  • Influence of implantation damages and intrinsic dislocations on phosphorus diffusion in ge

    IEEE Transactions on Electron Devices,0018-9383,2013.
    Ruan, Yujiao(1); Chen, Chengzhao(2); Huang, Shihao(1); Huang, Wei(1); Chen, Songyan(1); Li, Cheng(1...
    WOS:000326263200019   EI:20134616972379   10.1109/TED.2013.2280382
    收录情况：SCIE、EI

  • Enhanced absorption of graphene with one-dimensional photonic crystal

    APPLIED PHYSICS LETTERS,0003-6951,2012-07-30.
    Liu, Jiang-Tao; Liu, Nian-Hua; Li, Jun; Li, Xiao Jing; Huang, Jie-Hui
    WOS:000307676600034   EI:20123315333331   10.1063/1.4740261
    收录情况：SCIE、EI

  • Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator

    Nanoscale Research Letters,1931-7573,2012.
    Wu, Zhenhua (1, 2); Li, Jun (3)
    EI:20121014842623   10.1186/1556-276X-7-90
    收录情况：EI

  • The persistent charge and spin currents in topological insulator Bi2Se3 nanowires

    JOURNAL OF APPLIED PHYSICS,0021-8979,2011-11-01.
    Lou, Wen-Kai; Cheng, Fang; Li, Jun
    WOS:000297062100054   EI:20114714540598   10.1063/1.3658853
    收录情况：SCIE、EI

  • 氮氧化铝的原子层沉积制备及其阻变性能研究

    厦门大学学报. 自然科学版,0438-0479,2017.
    刘宇;余珏;黄巍;李俊;汪建元;徐剑芳;李成;陈松岩
    CSCD核心

  • 硅基自旋注入研究进展

    半导体技术,1003-353X,2015-09-03.
    卢启海;黄蓉;郑礴;李俊;韩根亮;闫鹏勋;李成
    CSCD扩展 理工二类核心

  • 图形化Si基Ge薄膜热应变的有限元分析

    厦门大学学报(自然科学版),0438-0479,2014-09-28.
    高玮;亓东锋;韩响;陈松岩;李成;赖虹凯;黄巍;李俊
    CSCD核心 理工二类核心

  • 电场驱动HgCdTe/CdTe量子阱拓扑相变引起的光吸收增强研究

    半导体光电,1001-5868,2018.
    黄蓉;李俊;李成