学者信息

林鼎渠 (DingQu Lin)

物理科学与技术学院

合作者

已发表成果:

WOK 论文 16 篇;

  • Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

    Journal of Physics D: Applied Physics,0022-3727,2024-05-24.
    Li, Zihao; Zhang, Mingkun; Fu, Zhao; Zhang, Zeyang; Wu, Shaoxiong; Zhang, Yuning; Lin, Dingqu; Hong...
    WOS:001176732700001   EI:20241015677500   10.1088/1361-6463/ad2bdb
    收录情况:SCIE、EI
  • High-Performance SiC/Graphene UV-Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

    ADVANCED OPTICAL MATERIALS,2195-1071,2024-05-10.
    Zhang, Zeyang; Sun, Cunzhi; Zhu, Baihong; Chen, Jiadong; Fu, Zhao; Li, Zihao; Wu, Shaoxiong; Zhang,...
    WOS:001217341700001   EI:20242016074801   10.1002/adom.202400469
    收录情况:SCIE、EI
  • Solid-State Lithium Batteries with Ultrastable Cyclability: An Internal-External Modification Strategy

    ACS NANO,1936-0851,2024-01-15.
    Luo, Linshan; Sun, Zhefei; You, Yiwei; Han, Xiang; Lan, Chaofei; Pei, Shanpeng; Su, Pengfei; Zhang,...
    WOS:001154890900001   EI:20240515463847   10.1021/acsnano.3c07306
    收录情况:SCIE、EI
  • Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

    Chinese Physics B,1674-1056,2023-05-01.
    Zhang, Ruijun; Hong, Rongdun; Han, Jingrui; Ting, Hungkit; Li, Xiguang; Cai, Jiafa; Chen, Xiaping; ...
    WOS:000992220100001   EI:20232214167554   10.1088/1674-1056/ac89db
    收录情况:SCIE、EI
  • Tunable responsivity in high-performance SiC/graphene UV photodetectors through interfacial quantum states by bias regulation

    Applied Physics Letters,0003-6951,2023-04-17.
    Zhu, Baihong; Sun, Cunzhi; Chen, Jiadong; Li, Zihao; Huang, Shiming; Wu, Shaoxiong; Lin, Dingqu; Li...
    WOS:000973323100004   EI:20231814029082   10.1063/5.0145334
    收录情况:SCIE、EI
  • A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

    Journal of Semiconductors,1674-4926,2023-02.
    Wang, Xiaojie (1); Shen, Zhanwei (2); Zhang, Guoliang (1); Miao, Yuyang (1); Li, Tiange (1); Zhu, X...
    EI:20231213790581   10.1088/1674-4926/43/12/122802
    收录情况:EI
  • Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticles in 4H-SiC Microholes

    ACS Applied Nano Materials,,2023.
    Yuan, Meng; Zhang, Mingkun; Fu, Zhao; Han, Shan; Zhang, Yuning; Wu, Shaoxiong; Hong, Rongdun; Chen,...
    WOS:001005196600001   EI:20232614308730   10.1021/acsanm.3c01080
    收录情况:SCIE、EI
  • High-Speed and Responsivity 4H-SiC 8 x 8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure

    IEEE Transactions on Electron Devices,0018-9383,2023.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:001025576700001   EI:20232714340607   10.1109/TED.2023.3286379
    收录情况:SCIE、EI
  • Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper

    NANO LETTERS,1530-6984,2021-01-27.
    Zhao, Zhijuan; Hou, Tianyu; Wu, Nannan; Jiao, Shuping; Zhou, Ke; Yin, Jun; Suk, Ji Won; Cui, Xu; Zh...
    WOS:000614066800038   10.1021/acs.nanolett.0c04724
    收录情况:SCIE
  • Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays

    IEEE Electron Device Letters,0741-3106,2021.
    Fu, Zhao; Zhang, Mingkun; Han, Shan; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Sha...
    WOS:000736740500020   EI:20215011321531   10.1109/LED.2021.3132415
    收录情况:SCIE、EI
  • The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

    IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021,,2021.
    Zhang, Ruijun; Hong, Rongdun; Cai, Jiafa; Chen, Xiaping; Lin, Dingqu; Zhang, Mingkun; Wu, Shaoxiong...
    WOS:000812299400054   EI:20220811682302   10.1109/WiPDAAsia51810.2021.9656062
    收录情况:EI、CPCI-S
  • Effect of epitaxial layer’s thickness on spectral response of 4H-SiC p-i-n ultraviolet photodiodes

    Electronics Letters,0013-5194,2019-02-21.
    Hou, Yansong (1); Sun, Cunzhi (1); Wu, Junkang (1); Hong, Rongdun (1); Cai, Jiafa (1); Chen, Xiapin...
    WOS:000458922500027   EI:20190806539970   10.1049/el.2018.8035
    收录情况:SCIE、EI
  • Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition

    Nanoscale Research Letters,1931-7573,2018.
    Zhang, Zhiwei (1); Cai, Weiwei (1, 2, 3); Hong, Rongdun (1, 2); Lin, Dingqu (1); Chen, Xiaping (1);...
    WOS:000438612100001   EI:20182805533906   10.1186/s11671-018-2606-2
    收录情况:SCIE、EI
  • Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

    NANOSCALE RESEARCH LETTERS,1556-276X,2017-09-26.
    Li, Yaping; Wang, Hui-Qiong; Zhou, Hua; Du, Damin; Geng, Wei; Lin, Dingqu; Chen, Xiaohang; Zhan, Hu...
    WOS:000411718000001   10.1186/s11671-017-2301-8
    收录情况:SCIE
  • In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (1122) GaN

    Crystal Growth and Design,1528-7483,2017-09-06.
    Wu, Zhengyuan(1,2); Song, Pengyu(1,2); Shih, Tienmo(1,3); Pang, Linna(4); Chen, Li(1); Lin, Guangya...
    WOS:000410254800027   EI:20173704149091   10.1021/acs.cgd.7b00584
    收录情况:SCIE、EI
  • Interface modification of the InGaN/GaN quantum wells: The strain pre-relief effect

    Nanotechnology,0957-4484,2009-06-10.
    Fang, Z.L.(1); Lin, D.Q.(1); Kang, J.Y.(1); Kong, J.F.(2); Shen, W.Z.(2)
    WOS:000266219800013   EI:20092712161829   10.1088/0957-4484/20/23/235401
    收录情况:SCIE、EI