学者信息
已发表成果：
WOK 论文 15 篇;中文核心 2 篇;其它论文 2 篇;专利发明 1 个;
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Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED
NANOSCALE RESEARCH LETTERS,1931-7573,2022-01-15.
Lu, Shiqiang; Luo, Zongyan; Li, Jinchai; Lin, Wei; Chen, Hangyang; Liu, Dayi; Cai, Duanjun; Huang, ...
WOS:000743336500001 EI:20220411488980 10.1186/s11671-022-03652-0
收录情况：SCIE、EI -
Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer
AIP Advances,2158-3226,2019-05-01.
Luo, Zongyan (1); Lu, Shiqiang (1); Li, Jinchai (1); Wang, Chuanjia (1); Chen, Hangyang (1); Liu, D...
WOS:000477701000005 EI:20192006915952 10.1063/1.5091027
收录情况：SCIE、EI -
Engineering upconversion using cavity plasmonic mode of Ag hemishell capped on NaLuF4:Yb,Er@SiO2 nanosphere
JOURNAL OF LUMINESCENCE,0022-2313,2019-02.
Li, AH; Liu, DY; Luo, W; Wang, JY; Sun, ZJ
WOS:000451782900034 EI:20184305987957 10.1016/j.jlumin.2018.10.079
收录情况：SCIE、EI -
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
SCIENTIFIC REPORTS,2045-2322,2014-06-05.
Yang, Weihuang; Li, Jinchai; Zhang, Yong; Huang, Po-Kai; Lu, Tien-Chang; Kuo, Hao-Chung; Li, Shupin...
WOS:000336788400001 10.1038/srep05166
收录情况：SCIE -
Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
AIP Advances,2158-3226,2013.
Yang, Weihuang(1); Li, Jinchai(1); Lin, Wei(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Ya...
WOS:000320673600003 EI:20132516425851 10.1063/1.4804247
收录情况：SCIE、EI -
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures
Journal of Semiconductors,1674-4926,2011-04.
Wang, Yuanzhang(1,2); Li, Jinchai(2); Li, Shuping(2); Chen, Hangyang(2); Liu, Dayi(2); Kang, Junyon...
EI:20111913959812 10.1088/1674-4926/32/4/043006
收录情况：EI -
Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy
Journal of Materials Research,0884-2914,2011-03.
Wang, Xiuhua; Chen, Shanshan; Lin, Wei; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong
WOS:000292826200007 EI:20114414460009 10.1557/jmr.2010.87
收录情况：SCIE、EI -
Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures
Journal of Materials Research,0884-2914,2010-06.
Yang, Weihuang(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Kang, Junyong(1)
WOS:000278161900007 EI:20104313324557 10.1557/jmr.2010.0135
收录情况：SCIE、EI -
Ellipsometry, FTIR, Raman and X-Ray Spectroscopy Analysis of PECVD a-Si1-xCx:H Film
SPECTROSCOPY LETTERS,0038-7010,2010.
Hong, Rongdun; Huang, Jun; Chen, Xiaping; Zhou, Yi; Liu, Dayi; Wu, Zhengyun
WOS:000277695300006 EI:20242616417938 10.1080/00387010903348276
收录情况：SCIE、EI -
Applied Physics Letters,0003-6951,2009-10-12.
Li, Jinchai(1); Yang, Weihuang(1); Li, Shuping(1); Chen, Hangyang(1); Liu, Dayi(1); Kang, Junyong(1)
WOS:000270915700013 EI:20094312400149 10.1063/1.3248026
收录情况：SCIE、EI -
Design and epitaxy of structural III-nitrides
Journal of Crystal Growth,0022-0248,2009-01-15.
Li, J. C.; Lin, W.; Yang, W. H.; Cai, W. Z.; Pan, Q. F.; Lin, X. J.; Li, S. P.; Chen, H. Y.; Liu, D...
WOS:000264161700013 10.1016/j.jcrysgro.2008.09.016
收录情况：SCIE、CPCI-S -
AlGaN-based deep-ultraviolet light emitting diodes fabricated on aln/sapphire template
Chinese Physics Letters,0256-307X,2009.
Sang, Li-Wen (1); Qin, Zhi-Xin (1); Fang, Hao (1); Zhang, Yan-Zhao (1); Li, Tao (1); Xu, Zheng-Yu (...
EI:20220711665817 10.1088/0256-307X/26/11/117801
收录情况：EI -
AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template
Chinese Physics Letters,0256-307X,2008-01-01.
Sang, Li-Wen (1); Qin, Zhi-Xin (1); Cen, Long-Bin (1); Shen, Bo (1); Zhang, Guo-Yi (1); Li, Shu-Pin...
EI:20220711663744 10.1088/0256-307X/25/1/070
收录情况：EI -
Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures
Proceedings of SPIE - The International Society for Optical Engineering,0277-786X,2008.
Chen, P.(1); Li, S.P.(2); Tu, X.G.(1); Zuo, Y.H.(1); Zhao, L.(1); Chen, S.W.(1); Li, J.C.(2); Lin, ...
EI:20081711211458 10.1117/12.792582
收录情况：EI -
Applied Physics Letters,0003-6951,2007-07-16.
Chen, P.(1); Tu, X.G.(1); Li, S.P.(2); Li, J.C.(2); Lin, W.(2); Chen, H.Y.(2); Liu, D.Y.(2); Kang, ...
WOS:000248194000003 EI:20073110718313 10.1063/1.2759267
收录情况：SCIE、EI
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高AI组分Ⅲ族氮化物结构材料及其在深紫外LED应用的进展
物理学进展,1000-0542,2013-04-20.
陈航洋;刘达艺;李金钗;林伟;杨伟煌;庄芹芹;张彬彬;杨闻操;蔡端俊;李书平;康俊勇
CSCD核心 理工二类核心 -
高Al组分AlGaN基紫外LED结构材料
厦门大学学报(自然科学版),0438-0479,2012.
张彬彬;李书平;李金钗;蔡端俊;陈航洋;刘达艺;康俊勇
CSCD核心 理工二类核心
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AlN薄膜的椭圆偏振光谱模型研究
福州大学学报(自然科学版),1000-2243,2007-08-20.
姜伟;李书平;刘达艺;康俊勇
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GaN薄膜光学常数的椭圆偏振光谱研究
福州大学学报(自然科学版),1000-2243,2007-08-20.
俞金玲;姜伟;李书平;刘达艺;康俊勇
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CN101289173B,2010-06-23.
康俊勇; 李金钗; 李书平; 杨伟煌; 陈航洋; 刘达艺