已发表成果:
WOK 论文 49 篇;中文核心 4 篇;其它论文 3 篇;
Lithium titanate synaptic device imitating lithium-ion battery structure
Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications
Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection
InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature
Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering
Complementary bipolar resistive switching behavior in lithium titanate memory device
Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy
Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering
Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy
Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing
The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy
Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template
Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries
In-plane crystalline anisotropy of bulk beta-Ga2O3
Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate
Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes
Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films
Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)
Growth mechanism identification of sputtered single crystalline bismuth nanowire
Any-polar resistive switching behavior in LATP films
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing
Schottky barrier height modulation effect on n-Ge with TaN contact
Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing
Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition
An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries
Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering
Low resistivity Ta textured film formed on TaN
Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering
Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device
Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer
Impacts of ITO interlayer thickness on metal/n-Ge contacts
Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode
Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate
Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation
Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Raman scattering study of amorphous GeSn films and their crystallization on Si substrates
High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics
An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices
Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer
Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode
Different behaviors in the transformation of PATP adsorbed on Ag or Au nanoparticles investigated by surface-enhanced Raman spectroscopy - A study of the effects from laser energy and annealing
Laser-induced chemical transformation of PATP adsorbed on Ag nanoparticles by surface-enhanced Raman spectroscopy - A study of the effects from surface morphology of substrate and surface coverage of PATP
Electrochemical behavior of N-methyl-N-carboxydecyl-4,4- bipyridinium probed by surface-enhanced Raman spectroscopy
Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method
Measurement of tide variation of the earth with laser double beam interference method
锗锡薄膜的分子束外延生长及退火研究
厦门大学学报(自然科学版),0438-0479,2023-03-28.固态电解质LATP薄膜的溅射制备及其性能研究
厦门大学学报(自然科学版),0438-0479,2021-10-09.氮氧化铝的原子层沉积制备及其阻变性能研究
厦门大学学报. 自然科学版,0438-0479,2017.循环氧化/退火制备GeOI薄膜材料及其性质研究
物理学报,1000-3290,2011.磁控溅射生长高Sn组分GeSn合金薄膜
第十一届全国硅基光电子材料及器件研讨会论文摘要集,,2016-06-16.激光显微拉曼技术检测晶体管工作电流导致的器件自加热现象
光散射学报,1004-5929,2012.微波大功率SiGe HBT的研究进展及其应用
微电子学,1004-3365,2005-10-20.