学者信息

徐剑芳 (JianFang Xu)

物理科学与技术学院

按发表年份分组
按发表刊物分组
合作者

已发表成果:

WOK 论文 49 篇;中文核心 4 篇;其它论文 3 篇;

  • Lithium titanate synaptic device imitating lithium-ion battery structure

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2024-09-27.
    Liao, Ye; Chen, Gongying; Yu, Jiulong; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu, Jianfang; Li...
    WOS:001260161500001   EI:20242816662414   10.1088/1361-6463/ad5aaa
    收录情况:SCIE、EI
  • Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

    Journal of Alloys and Compounds,0925-8388,2024-06-25.
    An, Yuying; Qian, Kun; Jiao, Jinlong; Wu, Songsong; Qian, Jinhui; Wu, Qiang; Wang, Jianyuan; Xu, Ji...
    WOS:001224557900001   EI:20241515881090   10.1016/j.jallcom.2024.174380
    收录情况:SCIE、EI
  • Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

    Applied Surface Science,0169-4332,2024-05-30.
    Zhu, Yiming; Yang, Tianwei; Ding, Haokun; Lin, Guangyang; Li, Cheng; Huang, Wei; Chen, Songyan; Wan...
    WOS:001185076400001   EI:20240815581036   10.1016/j.apsusc.2024.159673
    收录情况:SCIE、EI
  • InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

    Applied Physics Letters,0003-6951,2024-03-18.
    Jiao, Jinlong; Ji, Ruoyun; Yao, Liqiang; Rao, Yingjie; Ke, Shaoying; Xu, Jianfang; Zeng, Yibo; Li, ...
    WOS:001186659700008   EI:20241215794764   10.1063/5.0192394
    收录情况:SCIE、EI
  • Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

    Journal of Physics D: Applied Physics,0022-3727,2023-08-31.
    Lin, Guangyang; Qian, Jinhui; Ding, Haokun; Wu, Songsong; Li, Cheng; Wang, Jianyuan; Xu, Jianfang; ...
    WOS:000997114000001   EI:20232314181501   10.1088/1361-6463/acd4cb
    收录情况:SCIE、EI
  • Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

    Applied Surface Science,0169-4332,2023-06-30.
    Lin, Guangyang; Qian, Kun; Ding, Haokun; Qian, Jinhui; Xu, Jianfang; Wang, Jianyuan; Ke, Shaoying; ...
    WOS:000971474100001   EI:20231313804427   10.1016/j.apsusc.2023.157086
    收录情况:SCIE、EI
  • Complementary bipolar resistive switching behavior in lithium titanate memory device

    APPLIED PHYSICS EXPRESS,1882-0778,2023-05-01.
    Liao, Ye; Chen, Gongying; Luo, Linshan; Yu, Jiulong; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu...
    WOS:000992577300001   EI:20232214167642   10.35848/1882-0786/acd35e
    收录情况:SCIE、EI
  • Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2023-02-16.
    Qian, Kun; Wu, Songsong; Qian, Jinhui; Yang, Kaisen; An, Yuying; Cai, Hongjie; Lin, Guangyang; Wang...
    WOS:000917776000001   EI:20230513499395   10.1088/1361-6463/acaf39
    收录情况:SCIE、EI
  • Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

    SSRN,1556-5068,2023-01-31.
    Lin, Guangyang (1); Qian, Kun (1); Ding, Haokun (1); Qian, Jinhui (1); Xu, Jianfang (1); Wang, Jian...
    EI:20230035074   10.2139/ssrn.4343359
    收录情况:EI
  • Secondary Epitaxy of High Sn Fraction Gesn Layer on Annealing-Induced Strain Relaxation Gesn Virtue Substrate by Low Temperature Molecular Beam Epitaxy

    SSRN,1556-5068,2022-10-11.
    Qian, Kun (1); Wu, Songsong (1); Qian, Jinhui (1); Yang, Kaisen (1); An, Yuying (1); Cai, Hongjie (...
    EI:20220406892  
    收录情况:EI
  • Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

    JOURNAL OF ALLOYS AND COMPOUNDS,0925-8388,2022-09-15.
    Lin, Guangyang; Qian, Kun; Cai, Hongjie; Zhao, Haochen; Xu, Jianfang; Chen, Songyan; Li, Cheng; Hic...
    WOS:000806978200001   EI:20222912361316   10.1016/j.jallcom.2022.165453
    收录情况:SCIE、EI
  • The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

    SSRN,1556-5068,2022-07-18.
    Qian, Kun (1); An, Yuying (1); Cai, Hongjie (1); Yang, Kaisen (1); Qian, Jinhui (1); Ding, Haokun (...
    EI:20220292864  
    收录情况:EI
  • Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template

    JAPANESE JOURNAL OF APPLIED PHYSICS,0021-4922,2022-07-01.
    Gan, Qiuhong; Yu, Jiulong; Liao, Ye; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu, Jianfang; Li, ...
    WOS:000813914800001   EI:20222812337223   10.35848/1347-4065/ac759a
    收录情况:SCIE、EI
  • Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

    Nano Research,1998-0124,2022.
    Luo, Linshan; Zheng, Feng; Gao, Haowen; Lan, Chaofei; Sun, Zhefei; Huang, Wei; Han, Xiang; Zhang, Z...
    WOS:000880257500002   EI:20224613099216   10.1007/s12274-022-5136-2
    收录情况:SCIE、EI
  • In-plane crystalline anisotropy of bulk beta-Ga2O3

    Journal of Applied Crystallography,0021-8898,2021-08-01.
    Ma, Xiaocui; Xu, Rui; Xu, Jianfang; Ying, Leiying; Mei, Yang; Long, Hao; Zhang, Baoping
    WOS:000683118400013   EI:20215011326883   10.1107/S1600576721006427
    收录情况:SCIE、EI
  • Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

    Semiconductor Science and Technology,0268-1242,2020-09.
    Lin, Guangyang; Liang, Dongxue; Huang, Zhiwei; Yu, Chunyu; Cui, Peng; Zhang, Jie; Wang, Jianyuan; X...
    WOS:000559750100001   EI:20203809209079   10.1088/1361-6641/ab9d0a
    收录情况:SCIE、EI
  • Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

    Journal of Power Sources,0378-7753,2020-02-29.
    Zhang, Ziqi; Han, Xiang; Li, Lianchuan; Su, Pengfei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Li, ...
    WOS:000517663800006   EI:20195107870958   10.1016/j.jpowsour.2019.227593
    收录情况:SCIE、EI
  • Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

    Chinese Physics B,1674-1056,2020.
    Chang, Ailing; Mao, Yichen; Huang, Zhiwei; Hong, Haiyang; Xu, Jianfang; Huang, Wei; Chen, Songyan; ...
    WOS:000521196300001   EI:20201508395345   10.1088/1674-1056/ab6c4a
    收录情况:SCIE、EI
  • Growth mechanism identification of sputtered single crystalline bismuth nanowire (vol 9, pg 2091, 2019)

    APPLIED NANOSCIENCE,2190-5509,2019-11.
    Hong, HY; Zhang, L; Yu, CY; Zhang, ZQ; Li, C; Chen, SY; Huang, W; Wang, JY; Xu, JF
    WOS:000492663300044   10.1007/s13204-019-01056-8
    收录情况:SCIE
  • Growth mechanism identification of sputtered single crystalline bismuth nanowire

    APPLIED NANOSCIENCE,2190-5509,2019-11.
    Hong, HY; Zhang, L; Yu, CY; Zhang, ZQ; Li, C; Chen, SY; Huang, W; Wang, JY; Xu, JF
    WOS:000492663300043   EI:20211010033377   10.1007/s13204-019-01026-0
    收录情况:SCIE、EI
  • Any-polar resistive switching behavior in LATP films

    APPLIED PHYSICS LETTERS,0003-6951,2019-09-30.
    Jiao, JL; Li, LC; Cheng, S; Chang, AL; Mao, YC; Huang, W; Wang, JY; Xu, JF; Li, J; Li, C; Chen, SY
    WOS:000489308600023   EI:20194207540039   10.1063/1.5114860
    收录情况:SCIE、EI
  • Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,1369-8001,2019-07.
    Lin, GY; Liang, DX; Wang, JQ; Yu, CY; Li, C; Chen, SY; Huang, W; Wang, JY; Xu, JF
    WOS:000462768500010   EI:20191106632379   10.1016/j.mssp.2019.03.010
    收录情况:SCIE、EI
  • Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2019-05-08.
    Liang, DX; Lin, GY; Huang, DL; Ke, SY; Ruan, YJ; Chen, SY; Li, C; Huang, W; Li, J; Wang, JY; Xu, JF
    WOS:000460304400001   EI:20191506759788   10.1088/1361-6463/ab0536
    收录情况:SCIE、EI
  • Schottky barrier height modulation effect on n-Ge with TaN contact

    Materials Science in Semiconductor Processing,1369-8001,2019-03-01.
    Wang, Jianyuan (1); Huang, Wei (1); Xu, Jianfang (1); Li, Jun (1); Huang, Shihao (2); Li, Cheng (1)...
    WOS:000454537700029   EI:20184806166844   10.1016/j.mssp.2018.11.016
    收录情况:SCIE、EI
  • Low-temperature fabrication of wafer-bonded Ge/Si p-i-n photodiodes by layer exfoliation and nanosecond-pulse laser annealing

    IEEE Transactions on Electron Devices,0018-9383,2019-03.
    Ke, Shaoying (1); Ye, Yujie (1); Wu, Jinyong (1); Liang, Dongxue (1); Cheng, Buwen (2); Li, Zhiyong...
    EI:20191006585370   10.1109/TED.2019.2893273
    收录情况:EI
  • Homoepitaxy of Ge on ozone-treated Ge (1?0?0) substrate by ultra-high vacuum chemical vapor deposition

    Journal of Crystal Growth,0022-0248,2019-02-01.
    Wang, Jiaqi (1); Shen, Limeng (2); Lin, Guangyang (1); Wang, Jianyuan (1); Xu, Jianfang (1); Chen, ...
    WOS:000455667500018   EI:20184706111229   10.1016/j.jcrysgro.2018.11.003
    收录情况:SCIE、EI
  • An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

    Ionics,0947-7047,2019.
    You, Run (1); Han, Xiang (1, 2); Zhang, Ziqi (1); Li, Lianchuan (1); Li, Cheng (1); Huang, Wei (1);...
    WOS:000481943500009   EI:20191706811013   10.1007/s11581-019-02972-z
    收录情况:SCIE、EI
  • Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

    Materials Science in Semiconductor Processing,1369-8001,2018-12.
    Wang, Yisen (1); Zhang, Lu (1); Huang, Zhiwei (1); Li, Cheng (1); Chen, Songyan (1); Huang, Wei (1)...
    EI:20183005599973   10.1016/j.mssp.2018.07.030
    收录情况:EI
  • Low resistivity Ta textured film formed on TaN

    THIN SOLID FILMS,0040-6090,2018-07-31.
    Wang, JY; Xu, JF; Huang, W; Li, J; Huang, SH; Lai, HK; Li, C; Chen, SY
    WOS:000433425200006   EI:20182605358643   10.1016/j.tsf.2018.05.030
    收录情况:SCIE、EI
  • Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

    Applied Surface Science,0169-4332,2018-03-15.
    Ke, Shaoying(1); Lin, Shaoming(1); Ye, Yujie(1); Mao, Danfeng(1); Huang, Wei(1); Xu, Jianfang(1); L...
    WOS:000419116600049   EI:20174404355669   10.1016/j.apsusc.2017.10.150
    收录情况:SCIE、EI、SSCI
  • Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

    Journal of Materials Science,0022-2461,2018.
    Ke, Shaoying (1); Ye, Yujie (1); Wu, Jinyong (1); Ruan, Yujiao (2); Zhang, Xiaoying (3); Huang, Wei...
    EI:20184506045544   10.1007/s10853-018-3015-8
    收录情况:EI
  • Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

    JOURNAL OF PHYSICS D-APPLIED PHYSICS,0022-3727,2017-10-11.
    Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, So...
    WOS:000410939900003   10.1088/1361-6463/aa81ee
    收录情况:SCIE
  • Impacts of ITO interlayer thickness on metal/n-Ge contacts

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology,0921-5107,2017-10.
    Huang, Zhiwei(1); Mao, Yichen(1); Lin, Guangyang(1); Wang, Yisen(1); Li, Cheng(1); Chen, Songyan(1)...
    WOS:000411306900013   EI:20173003969629   10.1016/j.mseb.2017.07.014
    收录情况:SCIE、EI
  • Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

    IEEE TRANSACTIONS ON ELECTRON DEVICES,0018-9383,2017-06.
    Ke, Shaoying; Lin, Shaoming; Mao, Danfeng; Ji, Xiaoli; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, S...
    WOS:000402057100013   10.1109/TED.2017.2696579
    收录情况:SCIE
  • Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

    JAPANESE JOURNAL OF APPLIED PHYSICS,0021-4922,2017-05.
    Chen, Ningli; Lin, Guangyang; Zhang, Lu; Li, Cheng; Chen, Songyan; Huang, Wei; Xu, Jianfang; Wang, ...
    WOS:000398149700001   10.7567/JJAP.56.050301
    收录情况:SCIE
  • Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

    Materials Science in Semiconductor Processing,1369-8001,2016-12-01.
    Lin, Guangyang(1); Lan, Xiaoling(1); Chen, Ningli(1); Li, Cheng(1); Huang, Donglin(1); Chen, Songya...
    WOS:000388085800041   EI:20163802824036   10.1016/j.mssp.2016.09.003
    收录情况:SCIE、EI
  • Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    MATERIALS,1996-1944,2016-10.
    Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; C...
    WOS:000384670800010   EI:20164703032890   10.3390/ma9100803
    收录情况:SCIE、EI
  • Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

    Journal of Non-Crystalline Solids,0022-3093,2016-09-15.
    Zhang, Lu(1); Wang, Yisen(1); Chen, Ningli(1); Lin, Guangyang(1); Li, Cheng(1); Huang, Wei(1); Chen...
    WOS:000383302400012   EI:20162902602584   10.1016/j.jnoncrysol.2016.07.007
    收录情况:SCIE、EI
  • High-performance germanium n(+)/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

    CHINESE PHYSICS B,1674-1056,2016-05.
    Huang, Wei; Lu, Chao; Yu, Jue; Wei, Jiang-Bin; Chen, Chao-Wen; Wang, Jian-Yuan; Xu, Jian-Fang; Wang...
    WOS:000375681800050   10.1088/1674-1056/25/5/057304
    收录情况:SCIE
  • Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics

    APPLIED PHYSICS EXPRESS,1882-0778,2016-04.
    Lu, Chao; Yu, Jue; Chi, Xiao-Wei; Lin, Guang-Yang; Lan, Xiao-Ling; Huang, Wei; Wang, Jian-Yuan; Xu,...
    WOS:000375661600005   10.7567/APEX.9.041501
    收录情况:SCIE
  • An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices

    MATERIALS RESEARCH EXPRESS,2053-1591,2016-03.
    Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng; Chen, Songyan; Lai, Hongkai; Huang...
    WOS:000377811100013   EI:20191306678905   10.1088/2053-1591/3/3/035012
    收录情况:SCIE、EI
  • Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer

    OPTICS EXPRESS,1094-4087,2016-02-08.
    Ke, Shaoying; Lin, Shaoming; Li, Xin; Li, Jun; Xu, Jianfang; Li, Cheng; Chen, Songyan
    WOS:000371427100008   EI:20161402180307   10.1364/OE.24.001943
    收录情况:SCIE、EI
  • Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode

    Journal of Materials Chemistry A,2050-7488,2016.
    Han, Xiang(1); Chen, Huixin(2); Zhang, Ziqi(1); Huang, Donglin(1); Xu, Jianfang(1); Li, Cheng(1); C...
    WOS:000388504800021   EI:20164803063072   10.1039/C6TA07274G
    收录情况:SCIE、EI
  • Different behaviors in the transformation of PATP adsorbed on Ag or Au nanoparticles investigated by surface-enhanced Raman spectroscopy - A study of the effects from laser energy and annealing

    Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy,1386-1425,2015-05-05.
    Xu, Jian-Fang(1); Luo, Shi-Yi(2); Liu, Guo-Kun(3)
    WOS:000352661200004   EI:20150900573897   10.1016/j.saa.2015.02.039
    收录情况:SCIE、EI
  • Laser-induced chemical transformation of PATP adsorbed on Ag nanoparticles by surface-enhanced Raman spectroscopy - A study of the effects from surface morphology of substrate and surface coverage of PATP

    Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy,1386-1425,2015-03-05.
    Xu, Jian-Fang(1); Liu, Guo-Kun(1,2)
    WOS:000348955300103   EI:20150300431948   10.1016/j.saa.2014.10.083
    收录情况:SCIE、EI
  • Electrochemical behavior of N-methyl-N-carboxydecyl-4,4- bipyridinium probed by surface-enhanced Raman spectroscopy

    Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy,1386-1425,2013.
    Xu, Jian-Fang(1); Liu, Guo-Kun(2)
    WOS:000323396800009   EI:20134416909789   10.1016/j.saa.2013.05.058
    收录情况:SCIE、EI
  • Properties of ultra-thin SiGe-on-insulator materials prepared by Ge condensation method

    Physica Status Solidi (C) Current Topics in Solid State Physics,1862-6351,2012-10.
    Li, Cheng (1); Huang, Shihao (1); Lu, Weifang (1); Xu, Jianfang (1); Huang, Wei (1); Sun, Zhijun (1...
    WOS:000314688000035   EI:20124415631864   10.1002/pssc.201200038
    收录情况:EI、CPCI-S
  • Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer

    Applied Surface Science,0169-4332,2008-06-30.
    Cai, Kunhuang(1); Li, Cheng(1); Zhang, Yong(1); Xu, Jianfang(1); Lai, Hongkai(1); Chen, Songyan(1)
    WOS:000256099500011   EI:20082111276654   10.1016/j.apsusc.2008.02.075
    收录情况:SCIE、EI
  • Measurement of tide variation of the earth with laser double beam interference method

    Guangdianzi Jiguang/Journal of Optoelectronics Laser,1005-0086,1999-06.
    Zhou, Haiguang(1); Xu, Jianfang(1)
    EI:2000215121583  
    收录情况:EI
  • 锗锡薄膜的分子束外延生长及退火研究

    厦门大学学报(自然科学版),0438-0479,2023-03-28.
    林光杨;钱坤;蔡宏杰;汪建元;徐剑芳;陈松岩;李成
    CSCD扩展库
  • 固态电解质LATP薄膜的溅射制备及其性能研究

    厦门大学学报(自然科学版),0438-0479,2021-10-09.
    程实;汪建元;徐剑芳;黄巍;陈松岩
    CSCD扩展
  • 氮氧化铝的原子层沉积制备及其阻变性能研究

    厦门大学学报. 自然科学版,0438-0479,2017.
    刘宇;余珏;黄巍;李俊;汪建元;徐剑芳;李成;陈松岩
    CSCD核心
  • 循环氧化/退火制备GeOI薄膜材料及其性质研究

    物理学报,1000-3290,2011.
    胡美娇;李成;徐剑芳;赖虹凯;陈松岩
    CSCD核心 理工二类核心
  • 磁控溅射生长高Sn组分GeSn合金薄膜

    第十一届全国硅基光电子材料及器件研讨会论文摘要集,,2016-06-16.
    张璐;王一森;李成;陈松岩;黄巍;徐剑芳
  • 激光显微拉曼技术检测晶体管工作电流导致的器件自加热现象

    光散射学报,1004-5929,2012.
    徐剑芳;赖虹凯;李成
  • 微波大功率SiGe HBT的研究进展及其应用

    微电子学,1004-3365,2005-10-20.
    徐剑芳;李成;赖虹凯