英文论文
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文献类型
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Journal article (JA)
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题名
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N-doped β-Ga<sub>2</sub>O<sub>3</sub>/Si-doped β-Ga<sub>2</sub>O<sub>3</sub> linearly-graded p-n junction by a one-step integrated approach
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作者
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Liu, Chenxing; Wu, Zhengyuan; Zhai, Hongchao; Hoo, Jason; Guo, Shiping; Wan, Jing; Kang, Junyong; Chu, Junhao; Fang, Zhilai
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作者单位
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[Liu, Chenxing; Wu, Zhengyuan; Zhai, Hongchao; Wan, Jing; Chu, Junhao; Fang, Zhilai] Fudan Univ, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China. [Liu, Chenxing; Wu, Zhengyuan; Zhai, Hongchao; Wan, Jing; Chu, Junhao; Fang, Zhilai] Fudan Univ, Inst Optoelect, Shanghai 200433, Peoples R China. [Hoo, Jason; Guo, Shiping] Adv Microfabricat Equipment Inc, 188 Taihua Rd, Shanghai 201201, Peoples R China. [Kang, Junyong] Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effici, Xiamen 361005, Peoples R China.
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通讯作者地址
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Fudan Univ, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China.; Fudan Univ, Inst Optoelect, Shanghai 200433, Peoples R China.
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Email
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zhengyuanwu@fudan.edu.cn; zlfang@fudan.edu.cn
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ResearchID
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ORCID
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期刊名称
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Journal of Materials Science and Technology
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出版社
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JOURNAL MATER SCI TECHNOL
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ISSN
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1005-0302
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出版信息
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2025-02-20, 209 ():196-206.
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JCR
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影响因子
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ISBN
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基金
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National Key R&D Program of China [2022YFB3605500, 2022YFB3605503]
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会议名称
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会议地点
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会议开始日期
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会议结束日期
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关键词
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Electric fields; Electric rectifiers; Energy gap; Optoelectronic devices; Semiconductor diodes; Semiconductor doping; Semiconductor junctions; Wide band gap semiconductors
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摘要
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The p-n junction is the foundation building structure for manufacturing various electronic and optoelectronic devices. Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based electronic device, however, it is very difficult to achieve efficient bipolar doping due to the asymmetric doping effect, thereby impeding the development of p-n homojunction and related bipolar devices, especially for the Ga2O3-based materials and devices. Here, we demonstrate a unique one-step integrated growth of p-type N-doped (201) beta-Ga2O3/n-type Si-doped (201) beta-Ga2O3 films by phase transition and in-situ pre-doping of dopants, and fabrication of full beta-Ga2O3 linearly-graded p-n homojunction diode from them. The full beta-Ga2O3 p-n homojunction diode possesses a large built-in potential of 4.52 eV, a high operation electric field > 2.90 MV/cm in the reverse-bias regime, good longtime-stable rectifying behaviors with a rectification ratio of 10(4), and a high-speed switching and good surge robustness with a weak minority-carrier charge storage. Our work opens the way to the fabrication of Ga2O3-based p-n homojunction, lays the foundation for full beta-Ga2O3-based bipolar devices, and paves the way for the novel fabrication of p-n homojunction for wide-bandgap oxides. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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一级学科
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Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
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WOS入藏号
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WOS:001251708800001
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EI收录号
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20242316214576
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DOI
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10.1016/j.jmst.2024.05.023
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ESI
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收录于
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SCIE, EI
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