英文论文
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文献类型
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Article
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题名
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Impacts and effectiveness of sidewall treatment on the spatially resolved optical properties and efficiency enhancement for GaN-based blue and green micro-LEDs
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作者
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Zheng, Xi; Xiao, Jixuan; Dai, Yurong; Tong, Changdong; Ai, Sidan; Zhu, Lihong; Lu, Yijun; Chen, Zhong; Guo, Weijie
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作者单位
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[Zheng, Xi; Xiao, Jixuan; Dai, Yurong; Tong, Changdong; Ai, Sidan; Zhu, Lihong; Lu, Yijun; Chen, Zhong; Guo, Weijie] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China. [Guo, Weijie] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China. [Zheng, Xi] Nanyang Technol Univ, LUMINOUS Ctr Excellence Semicond Lighting & Displa, Sch Elect & Elect Engn, Singapore 639798, Singapore.
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通讯作者地址
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Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China.
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Email
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wjguo@xmu.edu.cn
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ResearchID
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ORCID
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期刊名称
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OPTICS AND LASER TECHNOLOGY
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出版社
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ELSEVIER SCI LTD
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ISSN
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0030-3992
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出版信息
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2025-02, 181
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JCR
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影响因子
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ISBN
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基金
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National Natural Science Foundation of China [62275227, 62274138, 11904302]; Science and Technology Project of Fujian Province [2023H4028, 2023H6038]; Key Research and Industrialization Projects of Technological Innovation of Fujian Prov-ince [2023G043, LHT202329]; Quanzhou Science and Technology [2022GZ7]; Shenzhen Science and Technology Program [JCYJ20220530143407017]
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会议名称
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会议地点
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会议开始日期
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会议结束日期
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关键词
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Micro-LED; Hyperspectral imaging; Internal quantum efficiency; Light extraction efficiency; Sidewall treatment
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摘要
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InGaN-based micro-light-emitting diodes (micro-LEDs) are crucial for efficient full-color micro-displays, but suffer from severe degradation of external quantum efficiency (EQE) with size reduction. In this study, the impacts of chemical treatment on the sidewall condition and the EQE of the 10 mu m InGaN-based blue and green micro-LEDs were demonstrated. The sidewall treatment can effectively alleviate the residual damage caused by dry etching and suppress the nonradiative recombination, facilitating the achievement of high internal quantum efficiency (IQE). Nevertheless, the sidewall light extraction of the micro-LEDs with smoother sidewall morphology after tetramethylammonium hydroxide (TMAH) treatment is lower than those with rough and prismatic sidewall surface. By utilizing microscopic hyperspectral imaging, the difference in chromatic properties between the inner region and the whole micro-LED caused by dry etching can hinder the stability of chromatic properties of InGaN-based blue micro-LEDs, which can be alleviated by sidewall treatment. The optimal duration for TMAH treatment is obtained as 10 min for both blue and green micro-LEDs, which is the consequence of the compromise between sidewall light extraction efficiency (LEE) and IQE, whereas the improvement of IQE by sidewall treatment for green micro-LEDs is less significant compared to that for blue ones, which can be attributed to the higher dislocation density and recombination via localized states of green InGaN micro-LEDs. This work demonstrates the evolution of IQE and LEE for blue and green micro-LEDs with different sidewall treatment strategies to achieving the ultimate EQE.
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一级学科
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Optics; Physics, Applied
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WOS入藏号
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WOS:001298042200001
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EI收录号
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20243416889870
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DOI
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10.1016/j.optlastec.2024.111611
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ESI
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收录于
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SCIE, EI
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